24 May 2018

GaN Systems showcasing GaN power technologies and customer solutions at PCIM Europe

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth 511, hall 9 (9-511) at PCIM (Power Conversion and Intelligent Motion) Europe 2018 in Nuremberg, Germany (5–6 June), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) is exhibiting record-setting GaN transistors and an array of new products, design tools and reference designs that make it easier to develop power systems, as well as presenting customer demonstrations.

Attendees can learn about the new products, the numerous IC firms that have collaborated with GaN Systems, and customer implementations spanning the consumer, data center, industrial and automotive market segments.

Highlights include:

• Record-setting GaN transistors such as the 100V, 120A, 5mΩ GaN E-HEMT device, the highest-current and power-efficient 100V GaN power transistor and 120A, 650V, 12mΩ GaN E-HEMT, the world’s highest-current-rated GaN power transistor.
• The new virtual Circuit Simulation Tool, which allows design engineers to evaluate GaN Systems’ devices in a variety of topologies and compare application conditions before hardware or system construction. Featuring a simple and intuitive interface, an engineer can quickly and easily tune parameters to suit their design goals and see the results in real time.
• New reference designs to ease any design challenge, including a 190W LLC + PFC adapter reference design, optocoupler reference design from Broadcom, and low-DCR, high-frequency controllers from Analog Devices.
• 3kW evaluation kit for high-efficiency power systems for data-center, automotive, and energy storage system applications. The evaluation kit enables power engineers to quickly take full advantage of GaN power transistors in designing improved and novel power systems.

Also, GaN Systems’ subject matter experts are speaking at four sessions on topics that include wireless power transfer, power modules, the transformation of the automotive world with power electronics, and the future design of GaN devices:

• 5 June (15–15:20): Exhibitor Forum, booth 507, hall 7 (7-507) – ‘GaN at its best…! Customized GaN Power Modules’;
• 6 June (14:30–15:30): Industry Forum, booth 155, hall 6 (6-155) – ‘GaN – Devices for the Future Design’;
• 7 June (10–10:20): E-Mobility Forum, booth 320, hall 6 (6-320) – ‘Transforming the Automotive World with Smaller, Lower Cost, More Efficient Power Electronics’; and
• 7 June (14:50-15:10): Conference Session, room München 2 – ‘High power GaN Power Amplifiers for Wireless Power Transfer Systems’.

“In the many years we’ve been attending PCIM, we’ve witnessed GaN transition from academic research to commercialization and adoption,” comments CEO Jim Witham.

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.gansystems.com