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Honeywell
3 June 2025

UK Electronics Skills Foundation launches Government-funded Semiconductor Skills, Talent and Education Programme

STEP to enable young people to pursue Electronics Engineering careers

3 June 2025

NUBURU accelerates M&A strategy with $100m flexible growth capital

Strategic growth potential enhanced through access to capital and key acquisition targets

2 June 2025

Sumitomo Electric and Osaka Metropolitan fabricate GaN HEMT on 2-inch polycrystalline diamond

Enhancing capacity and reducing power consumption for core communication devices

31 May 2025

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

30 May 2025

Skyworks appoints Robert Schriesheim as interim CFO

Previous appointee Mark Dentinger not joining firm due to unforeseen medical condition

29 May 2025

Aeluma and Thorlabs unveil large-diameter wafer manufacturing platform for quantum computing and communication

Demo shows promise for high-performance, mass-manufacturable quantum photonic circuits on silicon

29 May 2025

Infineon launches new rad-hard GaN transistors, including DLA JANS-certified device

First in-house-manufactured GaN transistor to earn US DLA JANS certification

29 May 2025

Micro-LED display chip market growing at 93% CAGR to US$744.7m in 2029

Micro-LED expands beyond displays, unlocking new opportunities in transparent and non-display applications

28 May 2025

Imec’s 300mm RF silicon interposer platform for chiplet-based heterogeneous integration demos record low insertion loss at frequencies up to 325GHz

Flexible integration of digital, analog, RF-to-sub-THz CMOS and III/V chiplets on a single carrier paves way for high-performance RF and mixed-signal applications

23 May 2025

Wolfspeed re-hires former LED Products division head David Emerson as chief operating officer

Emerson to oversee Operations, Supply Chain, and Quality divisions

23 May 2025

Singapore’s A*STAR’s inaugural Innovate Together event launches first industry-grade 200mm silicon carbide Open R&D Line

New facility to accelerate innovation and collaboration for silicon carbide devices

22 May 2025

NUBURU reveals TEKNE as targeted defense-tech acquisition

Acquisition to enhance revenue streams to $50m as blue laser technology to be integrated in new defense & security hub

Bruker
CS Clean
Vistec
News Features
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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