News Subsites

16 December 2025

IDTechEx assesses status of 800V for EVs

Adoption of silicon carbide and gallium nitride analysed

15 December 2025

CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration

Wafer-level assembly of SiGe HBT, RF SOI and passive technologies allows dense co-integration of best-in class functions

15 December 2025

Imec presents record WSe₂-based 2D-pFETs for extending logic technology roadmap

Collaboration with TSMC yields I_max up to 690µA/µm; partnership with Intel yields improved fab-compatible modules for source/drain contact formation and gate stack integration, with reduced EOT

15 December 2025

NTT reports first RF operation of AlGaN transistors with Al-content over 0.75

Expanding applications of AlN from power conversion to post-5G wireless communications

15 December 2025

CHIPX to establish 8-inch GaN-on-SiC wafer fab in Malaysia

Front-end manufacturing to span infrastructure, R&D, engineering, talent development, and technology transfer

12 December 2025

Navitas expands global distribution network with Avnet

Building on existing Avnet Silica (Europe) relationship to support high-growth high-power markets

11 December 2025

Patterning GaN for improved red LEDs

Square 300µm template region enhances LED external quantum efficiency by 57%.

11 December 2025

Wise Integration, Powernet and KEC sign MoU to co-develop SMPS solutions for AI server power supplies in Korea

Powernet to lead development of new SMPS designs using Wise’s WiseGan and WiseWare technologies; KEC to manage back-end manufacturing

11 December 2025

Cornell develops HEMTs on single-crystal AlN substrate for RF power amplifiers

Usage of gallium reduced by several orders of magnitude

10 December 2025

VisIC closes $26m round B investment

Hyundai/Kia joins as strategic investor

10 December 2025

UK and Canada collaborate on optical engine for faster, more efficient and more sustainable AI data centers

Trans-Atlantic partnership to accelerate global innovation and build new international supply chain

9 December 2025

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

4 December 2025

Semi-polar epitaxial layer overgrowth improves micro-LED performance

Researchers report efficiency and power benefits

27 November 2025

Nitrogen-polar III-N HFETs on 200mm sapphire substrates

Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.

20 November 2025

Far-UVC LEDs on c-plane sapphire

Devices with 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

13 November 2025

Inverting Ga-polar LEDs for N-polar benefit

Structure enables around 1000x light output over comparable N-polar LED.

30 October 2025

P-type layer etch for enhanced deep UV LEDs

Researchers achieve 10.9% increased light output power.

23 October 2025

Benefits of hexagonal mesa for micro-LEDs

Devices demonstrate enhanced current diffusion and uniformity.