2 March 2026
Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap
Collaboration with TSMC yields Imax up to 690μA/μm; partnership with Intel yields improved fab-compatible modules for source/drain contact formation and gate stack integration, with reduced EOT.
2 March 2026
Japan’s NTT reports the first RF operation of AlGaN transistors with Al-content over 0.75
Expanding applications of AlN from power conversion to post-5G wireless communications
2 March 2026
Increasing 2DEG density with aluminium nitride barriers
Researchers claim a record two-dimensional electron gas sheet density of 1.3x1014cm2 for AlN/GaN structures.
2 March 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
2 March 2026
Metal-modulated cubic GaN epitaxy
Process enables improved morphology and phase purity in red-light-emitting samples.
2 March 2026
Micro-LED reaches make-or-break phase as first production lines ramp at AUO
Supply chains and process choices are becoming clearer, says Yole, but a lack of standardization and manufacturing maturity remain major bottlenecks.
2 March 2026
Distributed polarizationdoped green laser diodes
Including a doped electron-blocking layer reduces laser threshold current and increases slope efficiency.
2 March 2026
Investment, not subsidy: could semiconductors unlock the UK’s productivity problem?
Howard Rupprecht of CSconnected argues that government investment into high-value manufacturing can catalyse private capital and create ‘sticky’ jobs.
