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Honeywell
18 July 2025

Ayar strengthens leadership team and expands global presence to accelerate high-volume co-packaged optics

Firm adds Marvell veteran Vivek Khanzodé as VP of engineering, and expands US and Taiwan operations to support high-volume growth

18 July 2025

onsemi to establish wide-bandgap materials research center at Stony Brook University

Investment supports materials research and workforce development in New York to address growing power needs of AI and electrification

18 July 2025

Microchip partners with Delta on silicon carbide solutions for power management

Microchip’s mSiC technology to be used in Delta’s smart energy-saving solutions

17 July 2025

FBH exceeds 1mW far-UVC LED CW output from single fiber

235nm UV micro-LED arrays target multidrug-resistant germs

17 July 2025

Quinas wins ICT Start-up category of 2025 WIPO Global Awards

World Intellectual Property Organisation recognizes Quinas piloting ULTRARAM from lab research to manufacturable technology

17 July 2025
ScAlN ferroelectric AlGaN HEMT opportunities
Potential for future reconfigurable multi-function, memory, and high-temperature applications.
17 July 2025

Fraunhofer ISE develops indoor photovoltaics with over 40% efficiency

Design optimized and solar cell absorber material quality improved

17 July 2025

Elucidation of scattering mechanism of 2DEG in PAMBE-grown ScAlN/GaN heterostructure

Improved GaN-HEMT performance paves way for advances in next-gen high-frequency communications

17 July 2025

Vermont Tech Hub’s semiconductor lab awarded $3.4m from Northeast Microelectronics Coalition

New test and characterization facility to open to tech businesses and innovators in early 2026

16 July 2025

UbiQD and First Solar establish long-term quantum dot supply agreement

Firms also expand PV module R&D collaboration focused on optimizing performance of utility-scale solar

16 July 2025

Resonac and Tohoku University synthesizing silicon carbide powder from silicon sludge and carbon dioxide

SiC powder to provide raw material for growth of SiC single-crystal used in power semis

15 July 2025

ETRI-Wavice project localizes core GaN components for AESA radar and SAR satellite

South Korean project targets self-reliance in GaN transmit/receive chips previously dependent on imports

Bruker
CS Clean
Vistec
News Features
10 July 2025
Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift constrained to 6.2nm between 1mA and 100mA injection.
3 July 2025
Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.
26 June 2025
AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio
12 June 2025
Tracking down sources of efficiency droop
Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
5 June 2025
Monolithic HEMT-micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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