1 March 2024
Lateral polarity structure GaN Schottky barrier diodes
Selective wet etching of N-polar material reduces reverse leakage through mesa sidewalls.
1 March 2024
Dynamic performance of vertical GaN JFETs
First study shows no shift in RON or VTH, according to researchers.
1 March 2024
Virtual body concept for 650V GaN-on-silicon ICs
A new technique suppresses dynamic on-resistance and substrate-induced cross-talk between transistors.
1 March 2024
V-defects for improved red InGaN LED performance
UCSB reports 6.5% peak external quantum efficiency on patterned sapphire.
1 March 2024
Red InGaN micro-LEDs on freestanding substrates
Researchers claim the first reports for such devices below 5μm.
1 March 2024
Compound semiconductor substrate market growing at 17% CAGR to $3.3bn in 2029
Markets fueled by strong growth in power electronics and photonics, says Yole Développement.
1 February 2024
Stacking p-down green LEDs using tunnel junctions
Reducing injection current is shown to enhance wall-plug efficiency.
1 February 2024
Nickel nanoparticle lift to p-GaN-free deep-UV LEDs
Lower contact resistance and higher light extraction give cooler-running chips and longer-life performance.