31 May 2024
HEMTs with 3C-SiC on 4H-SiC interfaces
Researchers claim fabrication of the first device on a little-studied structure.
31 May 2024
Reconstituted silicon wafers with III–V and silicon dies
A fab-compatible process enables the co-integration of III-V materials and silicon with no detectable impact on performance.
31 May 2024
High-power 1.55μm CW laser diodes on silicon
Ion-cutting of a thin InP buffer layer onto a silicon substrate for III-V epitaxy.
31 May 2024
III–nitride ultraviolet photonic circuits on silicon
Researchers demonstrate system comprising monitor, LED, modulator, and photodetector.
31 May 2024
Micro-LED IP plateaus after seven years of exponential growth
Over $12bn has been spent by the micro-LED industry, including $3bn by Apple before its exit, says Yole Développement.
30 April 2024
Recycling GaN for vertical power device performance
Researchers see potential cost savings for key electric vehicle markets.
30 April 2024
Layer transfer of III–N MEMS via 2D hexagonal boron nitride
Researchers fabricate free-standing structures on silicon micro-cavities.
30 April 2024
Cascading VCSELs to boost power efficiency
Room-temperature performance comparable with edge-emitting devices.