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LEDs Markets Micro Opto PV Suppliers

2 July 2024

GlobalFoundries acquires Tagore’s GaN IP portfolio

Technology acquisition expands GF’s power management solutions and accelerates roadmap

1 July 2024

Nokia to acquire Infinera for $2.3bn, boosting in-house optical technology and vertical integration

Nokia aims to strengthen position in optical sector, specifically in North America

1 July 2024

NUBURU postpones strategic reverse stock split to 10 July

Blue laser firm aims to resume trading on NYSE

28 June 2024

SMC opens second power MOSFET and diode fab in Nanjing

Capacity quadrupled, incuding end-to-end production of SiC products for the first time

27 June 2024

Near size-independent UV-A micro-LED performance

Researchers claim record for on-wafer EQE from sub-10µm device.

27 June 2024

Nexperia investing $200m in Hamburg site to add wide-bandgap semiconductors

R&D and production of GaN and SiC to be added to expansion of silicon production to 200mm wafers

27 June 2024

ROHM develops VCSELED infrared light source combining features of VCSELs and LEDs

Low temperature dependence plus wide-angle emission and uniform output aid ADAS

27 June 2024

NASA awards $750,000 EPSCoR grant for project using UV light for space communications

III–nitride wide- and ultra-wide-bandgap materials target high-data-rate communications with satellites and deep-space probes

26 June 2024

EC and Italian government awards IPCEI ME/CT funding to GlobalWafers/MEMC to establish 300mm wafer production

€103m supports EC’s aim to endorse research, innovation and industrial deployment of microelectronics and communication technologies across EU value chain

26 June 2024

SK keyfoundry intensifying efforts to develop GaN for power electronics

Development of 650V GaN HEMTs by end-2024, prior to portfolio spanning GaN and SiC power semis

25 June 2024

Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization

June quarter to see under-utilization impact from equipment incident at Durham 150mm fab

24 June 2024

NUBURU to implement 1-for-40 reverse stock split on 1 July

Firm trading on over-the-counter market while it targets return to NYSE American

News Features

20 June 2024

GaN HEMTs on 8-inch sapphire

Researchers seek to reduce production costs for devices with blocking voltages beyond 1200V.

13 June 2024

Etching-free pixel definition for InGaN micro-LEDs

Selective thermal oxidation proposed as viable alternative to plasma etch.

6 June 2024

InP-on-insulator substrates for 2.1μm lasers on silicon

Ion-slicing technique could enable lower-cost production of optoelectronics.

22 May 2024

Reversing size effects in cyan-green micro-LEDs

Researchers fabricate QD LEDs with M-plane sidewalls with much reduced surface damage

17 May 2024

Sumitomo presents pore-assisted free-standing GaN

Researchers hope technique will enable larger substrates beyond 100mm.

9 May 2024

Poly- MoS2 FETs integrated on 200mm substrate

Researchers report performance comparable to single-crystal devices.

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31 May 2024

HEMTs with 3C-SiC on 4H-SiC interfaces
Researchers claim fabrication of the first device on a little-studied structure.

31 May 2024

Reconstituted silicon wafers with III–V and silicon dies
A fab-compatible process enables the co-integration of III-V materials and silicon with no detectable impact on performance.

31 May 2024

High-power 1.55μm CW laser diodes on silicon
Ion-cutting of a thin InP buffer layer onto a silicon substrate for III-V epitaxy.

31 May 2024

III–nitride ultraviolet photonic circuits on silicon
Researchers demonstrate system comprising monitor, LED, modulator, and photodetector.

31 May 2024

Micro-LED IP plateaus after seven years of exponential growth
Over $12bn has been spent by the micro-LED industry, including $3bn by Apple before its exit, says Yole Développement.

30 April 2024

Recycling GaN for vertical power device performance
Researchers see potential cost savings for key electric vehicle markets.

30 April 2024

Layer transfer of III–N MEMS via 2D hexagonal boron nitride
Researchers fabricate free-standing structures on silicon micro-cavities.

30 April 2024

Cascading VCSELs to boost power efficiency
Room-temperature performance comparable with edge-emitting devices.

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