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Honeywell
16 October 2025

UK Semiconductor Centre forms Interim Steering Group

Office to be sited in Knowledge Quarter of Kings Cross, London

16 October 2025
Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.
16 October 2025

Infineon supporting NVIDIA’s 800VDC power architecture

SiC, GaN and silicon combine for better efficiency and serviceability in future AI data centers

16 October 2025

ST unveils prototype power delivery system for NVIDIA’s 800VDC power architecture

Firm combining SiC, GaN and silicon technologies and custom design at chip and package levels

16 October 2025

MIT-spinout Vertical Semiconductor raises $11m in seed funding round led by Playground Global

Vertical GaN power conversion technology to reduce heat, shrink power system footprint, and lower energy costs in AI infrastructure

16 October 2025

Stony Brook orders two CVD Equipment PVT150 systems for onsemi Silicon Carbide Crystal Growth Center

Systems to be installed at CVD Equipment for six months while center at SBU is established

16 October 2025

ams OSRAM and Nichia expand their intellectual property collaboration

Patent cross-license agreement extended from nitride LED and laser components to LED packages and modules

15 October 2025

Infineon launches its first 100V automotive-qualified GaN transistors

Firm supplying samples of pre-production product range for CoolGaN Automotive Transistor 100V G1 family

15 October 2025

Navitas supporting 800VDC power architecture for NVIDIA’s next-gen AI factory computing platforms

Navitas unveils new 100V GaN FETs, alongside 650V GaN and high voltage SiC devices, for NVIDIA’s 800VDC AI factory architecture

15 October 2025

Alpha and Omega Semiconductor supports 800VDC power architecture

SiC and GaN, power MOSFET and power IC solutions aligned with technical demands of next gen AI factories

14 October 2025

Power Integrations details 1250V and 1700V PowiGaN technology for 800VDC AI data centers

White paper shows advantages versus 650V GaN and 1200V SiC

14 October 2025

Renesas’ GaN-based power devices supporting NVIDIA’s 800V direct current power architecture

Power conversion and distribution solutions enable smarter, faster AI data-center architecture

Bruker
CS Clean
Vistec
News Features
9 October 2025
Electrochemical III-nitride device lift-off
Plotting a route to damage-free integration with diverse optoelectronic platforms.
2 October 2025
Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices achieve 180K T0, comparable to state-of-the-art devices on native III-V substrates.
25 September 2025
MOCVD–MBE hybrid growth for green laser diodes
Lower growth temperature enabled by MBE eases thermal budget constraints.
11 September 2025
Boron nitride as a buffer and gate dielectric
GaN HEMTs demonstrate ultra-high ~1011 on/off current ratio.
4 September 2025
Laser transfer of blue micro-LED arrays
Rubber tape used as device carrier before thermo-compression bonding.
28 August 2025
E-mode GaN HEMT breakdown beyond 10kV
Optimized RESURF structure enables improved breakdown voltage–on-resistance trade-off.
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Feature Downloads
22 September 2025

1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.

22 September 2025

E-mode GaN HEMT breakdown beyond 10kV
An optimized RESURF structure enables an improved breakdown voltage–on-resistance trade-off.

22 September 2025

D-band GaN power HEMTs on silicon
Researchers report the highest-frequency device performance so far.

22 September 2025

Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors.

22 September 2025

Laser transfer of blue micro-LED arrays
Researchers in Shanghai have used rubber tape as a device carrier before thermo-compression bonding of the flipped chip array to the target substrate.

22 September 2025

University of Glasgow reports single-chip laser system with 983Hz linewidth
A topological interface state extended laser with optical injection locking has been integrated on an indium phosphide substrate.

1 September 2025

N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.

1 September 2025

Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.

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