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Honeywell
30 October 2025
P-type layer etch for enhanced deep UV LEDs
Researchers achieve 10.9% increased light output power.
30 October 2025

onsemi unveils vertical GaN power semiconductors, based on proprietary GaN-on-GaN technology

Both 700V and 1200V devices now sampling to early-access customers

30 October 2025

IVWorks implements mass production of 8-inch InGaN/GaN nanowire epiwafers

Development of 12-inch epiwafers being accelerated, targeting solar panels for artificial photosynthesis of hydrogen

29 October 2025

Skyworks and Qorvo announce above-guidance preliminary September-quarter results

After agreeing to merge, firms to issue full financial results on 3–4 November

29 October 2025

5N Plus’ CFO Richard Perron to become president & CEO

CEO Gervais Jacques to be appointed executive chairman in May, as Luc Bertrand becomes lead independent director

29 October 2025

Power GaN device market growing at 42% CAGR to $3bn by 2030

Telecom & infrastructure segment growing at 53%, driven by AI data centers; automotive & mobility growing at 73% CAGR

28 October 2025

Skyworks and Qorvo to merge into $7.7bn-revenue RF, analog & mixed-signal semiconductor firm

Complementary product and technology portfolios create $5.1bn Mobile and $2.6bn Broad Markets businesses

27 October 2025

GigaDevice and Navitas unveil Digital Power Joint Lab to accelerate high-efficiency power management deployment

MCUs to combine with GaN and GeneSiC technologies

23 October 2025
Benefits of hexagonal mesa for micro-LEDs
Devices demonstrate enhanced current diffusion and uniformity.
23 October 2025

Ascent Solar and Defiant Space partner on global defense & national security and space market opportunities

Ascent’s space-proven solar technology to combine with Defiant’s ability to develop and integrate mission-focused space solutions

23 October 2025

Ascent delivers thin-film PV test samples to ocean monitoring firm and space power lasing company

Technology to be tested for saltwater environment durability and space-based power beaming receiving capabilities

23 October 2025

Aixtron’s preliminary Q3/2025 EBIT halved as revenue falls 23% year-on-year

Full-year 2025 revenue guidance narrowed from €530–600m to €530–565m

Bruker
CS Clean
Vistec
News Features
16 October 2025
Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.
9 October 2025
Electrochemical III-nitride device lift-off
Plotting a route to damage-free integration with diverse optoelectronic platforms.
2 October 2025
Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices achieve 180K T0, comparable to state-of-the-art devices on native III-V substrates.
25 September 2025
MOCVD–MBE hybrid growth for green laser diodes
Lower growth temperature enabled by MBE eases thermal budget constraints.
11 September 2025
Boron nitride as a buffer and gate dielectric
GaN HEMTs demonstrate ultra-high ~1011 on/off current ratio.
4 September 2025
Laser transfer of blue micro-LED arrays
Rubber tape used as device carrier before thermo-compression bonding.
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Feature Downloads
22 September 2025

1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.

22 September 2025

E-mode GaN HEMT breakdown beyond 10kV
An optimized RESURF structure enables an improved breakdown voltage–on-resistance trade-off.

22 September 2025

D-band GaN power HEMTs on silicon
Researchers report the highest-frequency device performance so far.

22 September 2025

Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors.

22 September 2025

Laser transfer of blue micro-LED arrays
Researchers in Shanghai have used rubber tape as a device carrier before thermo-compression bonding of the flipped chip array to the target substrate.

22 September 2025

University of Glasgow reports single-chip laser system with 983Hz linewidth
A topological interface state extended laser with optical injection locking has been integrated on an indium phosphide substrate.

1 September 2025

N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.

1 September 2025

Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.

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