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Honeywell
28 May 2025

Imec’s 300mm RF silicon interposer platform for chiplet-based heterogeneous integration demos record low insertion loss at frequencies up to 325GHz

Flexible integration of digital, analog, RF-to-sub-THz CMOS and III/V chiplets on a single carrier paves way for high-performance RF and mixed-signal applications

23 May 2025

Wolfspeed re-hires former LED Products division head David Emerson as chief operating officer

Emerson to oversee Operations, Supply Chain, and Quality divisions

23 May 2025

Singapore’s A*STAR’s inaugural Innovate Together event launches first industry-grade 200mm silicon carbide Open R&D Line

New facility to accelerate innovation and collaboration for silicon carbide devices

22 May 2025

NUBURU reveals TEKNE as targeted defense-tech acquisition

Acquisition to enhance revenue streams to $50m as blue laser technology to be integrated in new defense & security hub

22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
22 May 2025

KLA opens $138m R&D and manufacturing facility in Newport, Wales

New 237,000ft2 facility provides extra production and customer collaboration spaces, including 25,000ft2 of R&D cleanrooms and 35,000ft2 of manufacturing space and tool demo areas

22 May 2025

Fraunhofer ISE and III/V-Reclaim develop 150mm InP-on-GaAs substrates that can replace prime InP wafers

Metamorphic buffer layers and CMP yield low surface roughness and defect densities below 5x106cm–2

21 May 2025

Nimy completes $2.75m share placement to fund exploration at Western Australia gallium discovery

Funds to advance Block 3 gallium discovery by accelerating drilling, progressing resource definition and offtake discussions, and supporting metallurgical test work.

21 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings

Over 840 new patent families filed globally in Q1/2025, says Knowmade

21 May 2025

Infineon collaborates with NVIDIA on industry-first 800V power delivery architecture for AI data center server racks

New high-voltage direct current distribution ensures reliable and more efficient power delivery

21 May 2025

NUBURU forms working group with targeted defense-tech acquisition

Working group to oversee R&D of laser-tech-based solutions for defense applications

20 May 2025

Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package

Four new devices boost efficiency and power density of industrial equipment

Bruker
CS Clean
Vistec
News Features
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
10 April 2025
GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces Si and C contamination on free-standing substrate surface and in channel layer.
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Feature Downloads
29 April 2025

Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV

29 April 2025

Imec identifies stable operating range for GaN MISHEMTs in RF power amplifiers
Findings support GaN-Si’s potential for high-reliability 5G+/6G communication systems.

29 April 2025

AlScN-barrier GaN HEMT with record high on-current
Epitaxial high-k insulator enhancement enables 4A/mm on-current density.

29 April 2025

AlN template strategies for brighter UVC LEDs
Up to 90% efficiency boost from nanolayer modification, growth-mode modulation, and indium-doping methods

29 April 2025

Full-color monolithic micro-LED displays
Pixels combine RGB sub-pixels via stacking and selective material etch and regrowth.

29 April 2025

Reducing energy costs for AI and data processing
Chinese–German research has reduced SM-VCSEL energy per bit to 168fJ at 60Gbits/s.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

31 March 2025

Gallium arsenide nano-ridge laser diodes on 300mm silicon
Researchers achieve record-low 6x104/cm2 misfit defect density.

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