Honeywell
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
8 May 2025

imec and TNO launch Holst Centre Photonics Lab

Boosting R&D for integrated photonics in the Netherlands

8 May 2025

Indium Corp extracts gallium from feed sourced at Rio Tinto’s Quebec aluminium operation

3.5-ton demonstration plant a prelude to 40-ton annual capacity

7 May 2025

SMART Photonics buys AIXTRON’s G10-AsP MOCVD system

InP photonic integrated circuit foundry enhancing production capabilities

6 May 2025

Polar Light demos first pyramidal µLED micro display prototype

First micro-display prototype proves ability to integrate µLED architecture into working products

6 May 2025

Infineon introduces trench-based SiC superjunction technology

Initial 1200V ID-PAK products targeted at automotive traction inverters

6 May 2025

Infineon introduces new CoolSiC JFET technology for smarter and faster solid-state power distribution

Engineering samples available later in 2025, for volume production in 2026

6 May 2025

NUBURU unveils strategic initiative to revitalize Blue-Laser business unit

Working group to define new applications in defense sector

5 May 2025

SuperLight partners with Singapore-based distributor Precision Technologies

Global footprint expanded to Singapore, Malaysia, Indonesia and Thailand

5 May 2025

Compound semiconductors essential to unlocking the UK’s AI action plan, says CSA Catapult

Compound semiconductors to enable new applications, helping to achieve net zero and a resilient telecoms network 

2 May 2025

Partstat and WIN Semiconductors forge strategic partnership

Alliance enhances semiconductor storage and die & wafer banking

Bruker
CS Clean
Vistec
News Features
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
10 April 2025
GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces Si and C contamination on free-standing substrate surface and in channel layer.
3 April 2025
Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO delivers low on-resistance and high breakdown voltages.
26 March 2025
Reducing energy costs for AI and data processing
Chinese–German research reduces SM-VCSEL energy per bit to 168fJ at 60Gbits/s.
Feature Downloads
29 April 2025

Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV

29 April 2025

Imec identifies stable operating range for GaN MISHEMTs in RF power amplifiers
Findings support GaN-Si’s potential for high-reliability 5G+/6G communication systems.

29 April 2025

AlScN-barrier GaN HEMT with record high on-current
Epitaxial high-k insulator enhancement enables 4A/mm on-current density.

29 April 2025

AlN template strategies for brighter UVC LEDs
Up to 90% efficiency boost from nanolayer modification, growth-mode modulation, and indium-doping methods

29 April 2025

Full-color monolithic micro-LED displays
Pixels combine RGB sub-pixels via stacking and selective material etch and regrowth.

29 April 2025

Reducing energy costs for AI and data processing
Chinese–German research has reduced SM-VCSEL energy per bit to 168fJ at 60Gbits/s.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

31 March 2025

Gallium arsenide nano-ridge laser diodes on 300mm silicon
Researchers achieve record-low 6x104/cm2 misfit defect density.