9 December 2025
Global IP dynamics highlight surging GaN innovation activity in Q3/2025
Of 599 new patent families, 70% originate from Chinese players, notes KnowMade.
9 December 2025
Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial costeffective, large-scale production.
9 December 2025
Inverting Ga-polar LEDs for N-polar benefit
Structure enables around 1000x light output over comparable N-polar LED.
9 December 2025
Benefits of hexagonal mesa for micro-LEDs
Devices demonstrate enhanced current diffusion and uniformity.
9 December 2025
P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.
9 December 2025
Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.
3 October 2025
Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.
3 October 2025
Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices have achieved a T0 characteristic temperature of 180K, comparable to state-of-the-art devices on native III-V substrates.
