Honeywell
4 August 2026
E-mode gallium nitride quantum well in aluminium nitride XHEMTs
Structure could also enable combination of n-channel with p-channel HFETs for CMOS-type circuit designs
4 August 2026

Silanna unifies operating companies Silanna UV and Silanna Semiconductor under single corporate identity

Three technology divisions comprise analog digital converters, laser drivers, and UV LEDs

4 August 2026
UV LED reaches 19% wall-plug efficiency at 298nm
Researchers use p-GaN islands to enhance light extraction.
4 August 2026

AXT returns to profit, driven by record quarterly revenue from InP

AI data-center demand accelerates indium phosphide capacity expansion

4 August 2026

Kubos secures $2.1m investment to accelerate development of cubic-phase GaN

Funding to enable entry into micro-LED market within three years through IP licensing

4 August 2026

Palomino completes acquisition of Vega Links

Karthik Gopalakrishnan appointed as CTO and Rajesh Radhamohan as CPO; Sudeep Bhoja and Gopal Raghavan join Strategic Advisory Board

3 August 2026

BluGlass gives June-quarter update

Paid development contracts with government and tier-1 customers progressing

31 July 2026

Volta acquires remaining 20% stake in Springer Rare Earth and Gallium deposit

Contiguous mineral claim also acquired

31 July 2026

Qorvo grows quarterly margin, despite revenue falling by 2.9%

Double-digit year-on-year revenue growth in defense & aerospace, infrastructure and power supplement pivot to higher-value cellular placements

30 July 2026

Vexlum establishes London lab and appoints Stefan Truppe as managing director of Vexlum UK

Firm’s first UK R&D operation supports £2.5bn National Quantum Strategy.

30 July 2026

Aeluma gains $30m US CHIPS Act funding

Funding to advance scalable non-InP substrate technology for AI datacoms

30 July 2026

AXT announces long-term InP supply agreement with Lumentum

Initial deposit of $43.5m within 30 business days, followed by second $43.5m deposit during 2028

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Honeywell On-demand Webcast
News Features
24 June 2026
Tunnel-junction micro-LEDs with 45% wall-plug efficiency
Researchers avoid post-growth thermal p-GaN activation.
23 June 2026
Increasing passivated AlGaN power
Researchers report 1.7x Baliga figure-of-merit enhancement for transistor on sapphire substrate.
22 June 2026
Monolithic all-GaN 2T1C-μLED–photodetector integration
Researchers look forward to next-generation portable and wearable intelligent terminals
22 June 2026
Purifying red InGaN micro-LED spectra
Researchers reduce compositional pulling to achieve single, symmetric peak
22 June 2026
Monolithic bidirectional diamond switch
Researchers achieve 8.2mΩ-cm2 on-resistance and 290V breakdown.
12 June 2026
Micro-LED transfer via electrochemical etch
Researchers transfer arrays of devices down to 3µm onto silicon.
Feature Downloads
20 July 2026

From road to rack: 800V EV innovations redefining AI data-center power architecture
The power electronics market for data centers will grow 2.5-fold by 2036, forecasts IDTechEx.

20 July 2026

Silicon carbide technology patent activity remained strong in Q1, says KnowMade
New patent publications in Q1/2026 exceed 460 for SiC power devices & modules and 320 for substrates & epiwafers.

20 July 2026

E-mode gallium nitride quantum well in aluminium nitride XHEMTs
The structure could also enable a combination of n-channel with p-channel HFETs for CMOS-type circuit designs.

20 July 2026

Increasing passivated AlGaN power
Researchers report a 1.7x enhancement in the Baliga figure-of-merit for a passivated AlGaN MISHEMT transistor on sapphire substrate.

20 July 2026

Purifying red InGaN micro-LED spectra
Researchers have reduced compositional pulling to achieve a single, symmetric peak in emission from red indium gallium nitride multi-quantum well micro-LEDs.

20 July 2026

Monolithic all-GaN 2T1C-μLED–photodetector integration
Researchers at Shandong University look forward to next-generation portable and wearable intelligent terminals.

1 June 2026

Tunnel-junction micro-LEDs with 45% wall-plug efficiency
Researchers avoid post-growth thermal p-GaN activation.

1 June 2026

Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with a view to future near-eye applications.