3 October 2025
Boron nitride as a buffer and gate dielectric
Ultrawide-bandgap hexagonal boron nitride has been used to demonstrate AlGaN HEMTs with an ultra-high ~1011 on/off current ratio.
3 October 2025
Electrochemical III-nitride device lift-off
Plotting a route for the scalable, damage-free integration of III-nitrides onto diverse platforms for optoelectronic applications.
3 October 2025
MOCVD–MBE hybrid growth for green laser diodes
The lower growth temperature enabled by the use of MBE eases thermal budget constraints.
3 October 2025
Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.
3 October 2025
Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices have achieved a T0 characteristic temperature of 180K, comparable to state-of-the-art devices on native III-V substrates.
22 September 2025
Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors.
22 September 2025
Laser transfer of blue micro-LED arrays
Researchers in Shanghai have used rubber tape as a device carrier before thermo-compression bonding of the flipped chip array to the target substrate.
22 September 2025
University of Glasgow reports single-chip laser system with 983Hz linewidth
A topological interface state extended laser with optical injection locking has been integrated on an indium phosphide substrate.
