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10 July 2025

Aeluma secures new contracts from NASA and US Navy

Awards to speed development and commercialization of next-gen quantum and sensing systems

10 July 2025

NUBURU stockholders approve strategy to finance transformation

Financing key for Defense & Security Hub initiative

10 July 2025
Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift constrained to 6.2nm between 1mA and 100mA injection.
10 July 2025

AXT reduces Q2 revenue guidance from $20–22m to $17.5–18m

Revenue hit by slow issuance of export control permits for GaAs products and weak demand in China

9 July 2025

Singapore opens NSTIC (GaN), first national facility for gallium nitride

A*STAR, DSO and NTU Singapore partner on National Semiconductor Translation and Innovation Centre for Gallium Nitride

9 July 2025

Dhruva’s Solis+ space-grade solar panels to be used by Pixxel

All-Indian collaboration to integrate GaAs solar cells into hyperspectral imaging satellites

7 July 2025

Wolfspeed appoints former NXP and ams OSRAM executive Gregor van Issum as CFO

Transformation and strategic financing expert to aid drive toward profitability

4 July 2025

National Research Council of Canada signs MoU with Quebec’s C2MI and UK’s CSA Catapult

Strategic partnership strengthens Canadian and UK supply chains for growing AI compute capacity

3 July 2025
Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.
3 July 2025

Aixtron leading project to increase energy efficiency in SiC layer deposition

Fraunhofer IISB’s silicon carbide expertise to combine with bimanu’s simulation models

3 July 2025

TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals

Hsinchu Fab 5 being repurposed for advanced packaging, driven by AI applications

2 July 2025

Infineon on track to ship customer samples of GaN on 300mm wafers in Q4/2025

Silvaco’s Power Devices Solution to perform design technology co-optimization

Bruker
CS Clean
Vistec
News Features
26 June 2025
AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio
12 June 2025
Tracking down sources of efficiency droop
Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
5 June 2025
Monolithic HEMT-micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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