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Honeywell
20 June 2025

Ascent raises CIGS PV production-scale efficiency record from 14% to 15.7%

Strategy to improve material quality, efficiency and production design targets space market

19 June 2025

Applied Materials and CEA-Leti expand joint lab to drive innovation in specialty chips

Collaboration focuses on materials engineering solutions to enable more energy-efficient AI data centers

19 June 2025

University of Michigan synthesizes high-quality 2D molybdenum disulfide using Veeco’s Fiji ALD system

TBDS provides comparable film characteristics to traditional H2S-based growth, while enabling safer growth of 2D transition-metal di-chalcogenides

19 June 2025

Riber partners with Denmark’s NQCP, initiating phase II of ROSIE

Riber Oxide Silicon Epitaxy process to be qualified on first 300mm system for photonics compatible with silicon fabs

18 June 2025

IQE and Quinas complete Innovate UK-funded £1.1m ULTRARAM industrialization project

IQE scales up GaSb and AlSb epi for memory tech developed by Lancaster University spin-off

17 June 2025

Phlux adds high-speed, high-bandwidth 30µm APDs to the Aura family of 1550nm IR sensors

Lower capacitance of 0.15-0.4pF increases cut-off frequency to 3.5GHz, versus 1.8GHz for 80µm version and 0.7GHz for 200µm

17 June 2025

Fraunhofer IAF develops semi-automated manufacturing process for cost-efficient resonantly tunable quantum cascade laser modules

Flexible and scalable method efficiently combines laser sources into a multi-core system

17 June 2025

Wales Tech Week 2025 adds Vishay Intertechnology as Gold Partner

Partnership comes after Vishay’s recent £250m investment in its newly acquired Newport facility

12 June 2025
Tracking down sources of efficiency droop
Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
12 June 2025

Smartphone production at 289 million units in Q1

Output buoyed by China’s consumer subsidy program, says TrendForce

12 June 2025

Imec demonstrates record RF GaN-on-Si transistor performance

Record-breaking performance marks a crucial step in integrating GaN technology into next-gen mobile devices

11 June 2025

BluGlass extends closing date of share purchase plan offer to 17 June

Closing date extended from 10 June to give eligible shareholders time to participate

Bruker
CS Clean
Vistec
News Features
5 June 2025
Monolithic HEMT-micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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