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CSA Catapult translates research into double pulse testing
Service for up to 1.5kV and 1kA operation; 25–150°C; automated across voltage, current, temperature and gate resistance matrices; discrete devices and multi-device power modules
Atomera’s MST-enabled GaN-on-Si devices reduce parasitic interface charge by order of magnitude
Incize’s RF characterization shows significant reduction in RF losses
Mitsubishi Electric to ship 5th-generation trench SiC MOSFET bare die samples
On-resistance cut by 25% from 4th-generation trench SiC MOSFETs, boosting xEV power efficiency
RTX’s Raytheon awarded $515m contract for GaN-based SPY-6 family of radars
Contract accelerates integration and test support for US Navy’s maritime radar
ROHM’s 750V SiC MOSFET adopted in battery backup unit for AI servers
SCT4013DLL installed in power supply of ±400V power architecture
EPC targets high-density motion systems with GaN ePower Stage technology
EPC91128–EPC91131 evaluation boards enable rapid 3-phase BLDC motor drive inverter development supporting up to 29ARMS phase current
Navitas collaborates with NVIDIA MGX Ecosystem to accelerate 800VDC AI infrastructure
800V-to-6V DC–DC power delivery board shown at NVIDIA’s AI Factory MGX Ecosystem Showcase at COMPUTEX
Wise Integration unveiling digital control roadmap for next-gen power conversion at PCIM
Firm showcasing WiseWare-controlled AC–DC platforms spanning 240W to 7kW and roadmap toward next-gen WiseGan Digital First power ICs
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