AES Semigas

Honeywell
3 March 2026

Soitec and NTU Singapore reporting results of research program into 6G connectivity

Power-added efficiency exceeds 50% at FR3 frequencies

2 March 2026

EPC highlights Gen 7 GaN for AI infrastructure and GaN ICs for robotics at APEC

Enabling scalable power for AI computing and next-generation robotics

2 March 2026

Navitas exhibiting solutions for AI data-center, grid and energy infrastructure, performance computing, and industrial electrification

Product and system highlights include latest AI data-center solutions including a 10kW ‘GaN-powered’ 800V–50V brick, ultra-high-voltage SiC, SiCPAK modules, and 650V & 100V GaNFast power devices.

27 February 2026

Infineon adds to CoolGaN Drive HB 600V G5 product family

Four new devices integrate two 600V GaN switches in half-bridge configuration with high- and low-side gate drivers and bootstrap diode

27 February 2026

UCSB’s James Buckwalter inducted as senior member of the US National Academy of Inventors

Honored for work on high-speed and high-frequency ICs integrating CMOS with III-Vs

27 February 2026

ROHM licenses TSMC’s GaN processs technology for Hamamatsu fab

End-to-end, in-house production from 2027 to meet demand for applications such as AI servers and EVs

26 February 2026
GaN-on-silicon HEMTs for millimeter-wave 5G
Devices at 30GHz reach more than 60% power-added efficiency with 1.1dB NFmin noise figure
25 February 2026

EPC adds 3-phase BLDC motor drive inverter evaluation board for humanoid robot joint applications

Integrated GaN power stage with onboard control, sensing and communication delivers up to 20ARMS in a 32mm circular design

Bruker
LayTec

Microelectronics UK

Book This Space