AES Semigas

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3 February 2023

Qorvo introduces three-stage power solution for phased-array radar

Three-chip solution provides configurable GaN bias point autocalibration

3 February 2023

pSemi’s high-linearity sub-6GHz RF switches reach volume production

SP4T switches span n41, n77, n78 and n79 bands for hybrid beam-forming systems

3 February 2023

MACOM to acquire OMMIC for €38.5m

High-frequency MMICs and design capability address telecoms, industrial and aerospace & defense markets

2 February 2023
Surge handling of GaN polarization superjunctions
Research shows that polarization superjunction diodes can be highly cost-effective and reliable.
2 February 2023

ZF invests in Wolfspeed to support construction of largest SiC device fab

Joint R&D center in Germany to advance silicon carbide system and device innovation

2 February 2023

Wolfspeed chooses Germany for site of largest silicon carbide device fab

ZF-funded construction dependent on EC state aid approval

31 January 2023

Navitas’ GeneSiC MOSFETs used in KATEK’s 4.6kW Steca solar inverters

1200V, 75mΩ devices used in a two-level converter, with bi-directional boost converters and H4-topology for AC voltage output

31 January 2023

EPC launches 200V, 10mΩ GaN FET

EPC2307 completes family of six footprint-compatible QFN-packaged GaN transistors rated at 100V, 150V and 200V

Bruker
Aixtron
K-Space
LayTec

Dwyer