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Wolfspeed agrees multi-year deal to supply 1200V silicon carbide devices to BorgWarner
Long-term agreement supports 800V SiC-based inverter platform
SemiQ makes available Gen4 1200V and 750V SiC MOSFETs
GP4T011A120H cuts on-resistance by 21% and switching energy by 11%
EPC adds two three-phase inverter evaluation platforms to 100V GaN motor drive portfolio
Evaluation boards accelerate development of compact, high-efficiency motor drives
Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe
Austrian state funding of €319m under European Chips Act part of €1.1bn investment in Villach
Infineon supplying world’s first 900V GaN monolithic BDS devices to Enphase
CoolGaN 900V monolithic BDS to be used in IQ Solid-State Transformer for AI data centers
Vertical Semiconductor gains $73m in US CHIPS Act funding
Incentives to accelerate R&D on vertical GaN power transistors, unlock domestic production, and strengthen US in power infrastructure for AI and HPC
ST extends MasterGaN integrated transistor/driver family
MasterGaN7 devices contain 650V e-mode GaN transistors with 6A maximum current rating
Laser lift-off and transfer reduces thermal resistance by factor of 3.
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