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Infineon’s rad-hard devices used aboard NASA’s Artemis II Orion capsule
JANS-qualified device is first internally manufactured rad-hard GaN transistor on market
Quinas completes Innovate UK project advancing ULTRARAM for AI and neuromorphic computing
Project supports work toward ULTRARAM crossbar arrays and future chiplet-level integration
EPC releases 5kW GaN 3-phase inverters for robotics and light EVs
EPC9186HC2 and EPC9186HC3 evaluation platforms enable high-current BLDC control up to 150ARMS using EPC2361 eGaN FETs
Navitas appoints Gregory M. Fischer as independent director
Ex-Broadcom exec brings experience n in governance and business leadership
QuInAs links device physics to AI system performance using ULTRARAM
Work presented at International Symposium on Quality Electronic Design
HRL’s T3L 40nm GaN-on-SiC technology achieves Manufacturing Readiness Level 6
Process is compatible with three-dimensional heterogeneous integration architectures
IVWorks raises $4.5m to expand reGaN technology into RF and AI power semi markets
Targeting E/W-band RF in satcoms and wireless backhaul, and expanding into AI power delivery through PoL converters for HBM and GPU platforms
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