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Navitas’ new 1200V SiCPAK power modules enable high reliability and efficient high-temperature performance
Low-cost epoxy-resin potting enables 5x lower thermal resistance increase for extended system lifetime
ROHM highlighting e-mobility and industrial applications at PCIM 2025
Showcasing reference projects with partners and presenting evolution of package designs and evaluation boards
UIUC reports record switching performance in intrinsic diamond photoconductive semiconductor switches
Record voltage/current handling and slew rates, efficiency and reliability simultaneously enables a step towards Megawatt-power nanosecond switching
Polar to license Renesas’ GaN-on-Si technology and onshore commercial fabrication of 650V-class devices on 200mm wafers
Partnership strengthens domestic supply chain and enhances access of dual-use technology to US customer base
Navitas gains automotive qualification of high-power GaNSafe ICs
AEC-Q100 for packaged integrated circuits and AEC-Q101 for discrete semiconductors qualify both discrete power FET stage and combined IC solution
Toshiba showcasing wide-bandgap technology at PCIM
Updates on advances in 6-inch silicon carbide
Diodes Inc adds 650V SiC Schottky diodes with low figure-of-merit
Compact, low-profile T-DFN8080-4 surface-mount package incorporates large underside heat pad, reducing thermal resistance
ST reshaping manufacturing footprint to invest in 300mm silicon, 200mm SiC, and technology R&D
Program, including resizing global cost base, to shed 2800 staff over three years
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