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Navitas collaborates with NVIDIA on 24kW, 800V-to-12V power delivery board for next-gen AI infrastructure
Single stage eliminates 50V IBC power stage, boosting system efficiency and reducing board space
Polar collaborates with IC-Link by imec on 8-inch manufacturing of e-mode GaN devices
Focus on 40–650V initially, and markets such as 800V-to-12V conversion in data centers in future
CML Micro launches compact, flexible power amplifier for next-gen ISM-band radio designs
New 3mm x 3mm QFN device combines broad supply-voltage capability with smaller footprint
Infineon launches 27kW three-phase PSU for AI server power architectures
650V CoolSiC MOSFETs allow power density of 116W/in3
Wolfspeed receives conditional $1.5bn loan commitment from US Department of War
Financing to support domestic development and production of silicon carbide materials and wide-bandgap power devices, with focus on national security
China comprises majority of new RF GaN patent families in Q2/2026, says KnowMade
Latest RF GaN Technology Patent Monitor finds over 30 new entrants, mostly Chinese
Researchers claim record 154.1V/V maximum voltage gain, 10.4ns/stage RO delay, and first 6T-SRAM.
Power GaN patenting in Q2/2026 led by industrial assignees, reports KnowMade
Chinese universities maintained strong presence in GaN power device innovation
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