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Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs
Top-side-cooled SMD package provides practical route to higher power density and system efficiency while simplifying heatsink and mechanical integration
ROHM launches new top-side-cooling package for SiC MOSFETs
High heat dissipation combined with high voltage support
SemiQ expands high-thermal-performance QSiC Dual3 module range for SSTs and AC–DC converters in AI data-center power systems
Half-bridge series for data-center power converters and industrial motor drives features low-RDSon SiC MOSFETs and parallel SBDs
Wolfspeed introduces Gen 5 SiC MOSFET technology
RDS(ON) reduced by up to 27% for 1200V devices
Nexperia and Semikron Danfoss to explore strategic collaboration on SiC power modules for automotive applications
Combining semiconductor and module expertise to advance high-performance solutions for EVs
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Direct-cooled thermal management offered by reflow-compatible, isolated thermal pad boosts power density, reliability and efficiency
WIN’s 0.12µm GaN power process qualified for 40V operation
Increased amplifier power levels, rugged antenna switches and robust LNAs for multi-function integration and single-chip front-ends
GE Aerospace and Wolfspeed sign MoU to collaborate on accelerating high-voltage silicon carbide adoption
Wolfspeed to supply 10kV MOSFET die and jointly determine standard high-voltage power module formats
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