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SMC opens second power MOSFET and diode fab in Nanjing
Capacity quadrupled, incuding end-to-end production of SiC products for the first time
Nexperia investing $200m in Hamburg site to add wide-bandgap semiconductors
R&D and production of GaN and SiC to be added to expansion of silicon production to 200mm wafers
Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A
MPS design yields lower forward voltage drop, capacitive charge and reverse leakage current, boosting efficiency and reliability for switching power designs
SK keyfoundry intensifying efforts to develop GaN for power electronics
Development of 650V GaN HEMTs by end-2024, prior to portfolio spanning GaN and SiC power semis
IEEE’s 2nd Wide Bandgap Power Devices in Europe conference being held in South Wales
WiPDA-Europe 2024 co-hosted by Cardiff University and CSA Catapult
Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization
June quarter to see under-utilization impact from equipment incident at Durham 150mm fab
Navitas’ GaNFast power ICs used in Lenovo’s Xiaoxin 105W and Legion C170W fast chargers
New high-speed GaN chargers designed for daily travel and gaming
TI and Delta collaborating on EV on-board charging
Joint innovation lab to enable Delta to leverage TI’s digital control and GaN technology to enhance power density and performance of EV power systems
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