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Munich Court bars Innoscience from importing products into Germany that infringe Infineon’s patent
Innoscience ordered to pay damages to Infineon
Innoscience secures removal of court-enjoined Infineon GaN products from electronica China
On-site IP dispute mediation authorities intervene after Supreme Court upholds injunctions
Dynex introduces 450A, 650V GaN half-bridge power module
Planar PCB embedding technology minimizes parasitic inductance, and double-sided-cooled planar package structure minimizes thermal resistance
Gartner names Infineon as company to beat in AI data-center power semiconductors
Position being tested by growing competition in SiC and GaN
Infineon introduces 120V common-footprint gate driver for silicon and GaN power designs on the same PCB
EiceDRIVER 2EDL90xG3 supports 48V and high-voltage intermediate bus converter applications in AI data-center servers
Paragraf forms Advisory Committee and adds to board of directors
Firm aims to scale production, expand internationally and integrate into global electronics manufacturing ecosystem
Infineon introduces first 24kW SiC-based battery backup unit reference design for high-voltage DC bus architectures in AI data centers
Power density of 450W/in3 and efficiency over 99% in form factor of low-voltage BBUs
Infineon adds two new high-efficiency server power solutions for AI data-center PSUs
18kW PSU reference design for 50V rack architecture, and 30kW interleaved T-Type PFC evaluation board for 800VDC or ±400VDC rack architectures with power sidecar
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