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Mazda and ROHM jointly developing automotive components using GaN
Existing development of inverters using silicon carbide now complemented by gallium nitride power semiconductors
Pragmatic launches NFC Connect RFID near-field connectivity product line
Ultra-thin and physically flexible IGZO-based chips enable integration even on curved surfaces
UK welcomes Vishay’s planned £250m investment in Newport Wafer Fab for silicon carbide device production
Investment to directly support over 500 jobs in South Wales
Wolfspeed appoints Robert Feurle as CEO & board member
Interim executive chairman Thomas Werner to return as chairman of board after transition
Diodes Inc launches InSb Hall-element sensors for rotation and current detection applications
AHE300 supports classifications C–G of VH 168–370mV; AHE10x sensors support C–H up to 415mV.
Silicon Austria Labs and TU Graz launch joint Power Electronics Research Laboratory
PERL to push limits of operating switching frequency of power electronic converters
USPTO gives ruling on EPC patent disputed by Innoscience
Innoscience reckons that USPTO decision invalidates EPC’s claims in ITC patent case
TI launches integrated GaN power stages in TOLL packages
TI’s GaN and high-performance gate driver combined with advanced protection features in industry-standard package
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