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Mitsubishi Electric suppresses frequency dispersion in GaN transistors using GaN substrates
Details are being presented at the International Workshop on Nitride Semiconductors
onsemi introduces EliteSiC M4 fourth-gen silicon carbide platform, with up to 30% higher power density and 35% lower losses
750V automotive traction bare die available now; voltage options up to 1200V expected in 2027
Infineon presents first functional power devices on 300mm SiC wafers
Processed 300mm silicon carbide wafer being presented at electronica
onsemi and Czech Republic agree to conclude SiC expansion project, but reaffirm partnership
Change reflects evolving SiC market and project economics
Guerrilla RF enhances corporate governance by appointing David Bell as chairman
CEO Ryan Pratt to continue as director
GaNrich providing 40ā1200V GaN power device portfolio
40Vā250V low-mid voltage and 650Vā1200V high-voltage ranges based on GaN-on-Si and GaN-on-sapphire platforms
Infineon and SOLUM strengthen collaboration on HVDC power solutions for AI data centers
Firms to expand work across intermediate bus converters, battery backup units and power supply units
Guerrilla RF appoints Lauren Winslow as executive VP, sales
Chief business officer Kellie Chong leaving firm
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