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ASML, TSMC and imec present 300mm integration route for industry-ready 2D-material-based transistors
First scaled nFETs and pFETs with 50nm contacted poly pitch, patterned using EUV lithography
IVWorks’ reGaN technology enables first 742GHz GaN HEMT
Kyungpook National University unveils 45nm GaN HEMT device at VLSI Symposium
Munich District Court rules in favour of Infineon in patent infringement cases against Innoscience
Innoscience claims current GaN power device products unaffected by ruling
CGD and NXP collaborate to accelerate time to market
Firms to deliver complete power conversion solutions for automotive and data-center markets
Wolfspeed appoints Daniel Whalen as VP of investor relations
Recruit from Qorvo to enhance engagement with financial community
China’s Supreme Court upholds injunction against Infineon, says Innoscience
Infineon prohibited from selling GaN products in mainland China
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