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Lateral iPSJ diodes and transistors achieve highest VBR among reported GaN-on-Si devices.
Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers
Package footprint shrunk by 57% versus TOLT, with low on-resistance of 20mΩ
Arkansas Research Institute for Electronics Systems launched
ARIES to develop, produce and deploy next-gen power electronics and semiconductors
Eaton to use Infineon’s silicon carbide power devices in medium-voltage solid-state transformer for 800V data-center power distribution
Collaboration exploring next-gen SST platforms based on 2.3kV and 3.3kV SiC power modules
Navitas awarded ALATTIS US Army project to develop 10kV power semiconductors
Accelerated, Large-Area, 10kV SiC IGBT program targets resilient US-anchored manufacturing supply chain
Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors
InGaAs-on-silicon HEMT with gate-length of 20nm enables 11 ± 2dB gain at 4–420GHz
Wise Integration’s digital control technology to combine with Navitas’ wide-bandgap technologies
Collaboration to advance performance computing applications for AI PCs, high-end workstations, gaming desktops and industrial systems
Toshiba launches 3300V SiC MOSFET module
High-surge-current capability helps to improve industrial equipment reliability
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