AES Semigas

HoribaHoriba
25 November 2024

Diamfab and HiQuTe Diamond partner on synthetic diamond for power electronics

French CNRS spin-offs target vertical Schottky diode prototypes in Spring

22 November 2024
MESFETs on single crystal aluminium nitride substrate
Devices reach 2kV breakdown performance with short 15µm gate–drain distance.
21 November 2024

GlobalFoundries’ $1.5bn US CHIPS Act funding confirmed by Department of Commerce

Funding to support New York expansion plus Vermont fab upgrade for high-volume GaN manufacturing

19 November 2024

Gregg Lowe departs Wolfspeed as president & CEO

Chairman Thomas Werner appointed executive chairman

18 November 2024

Microelectronics Commons Hubs gain extra $160m in US CHIPS Act funding

Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub gets $23.7m

15 November 2024

Wise-integration expands in North America with Ottawa Design Center

Canada-based center to develop next-gen WiseGan digital solutions for power conversion

14 November 2024

Toshiba ships early test samples of bare die 1200V SiC MOSFET

Check pattern of embedded Schottky barrier diodes enables low on-resistance and high reliability for automotive traction inverters

14 November 2024
Boron enables AlN on silicon growth without cracks
Researchers process AlN layers with low dislocation density.
Bruker
Aixtron
K-Space
LayTec

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