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Navitas previews advances in GaN and SiC technologies, including first 8.5kW AI data-center power supply at electronica
Efficient and reliable power solutions for AI data centers, EVs and consumer markets, from 20W to 20MW
All-GO-HEMT project gains €2m German funding to develop high-mobility gallium oxide
Charge carrier mobility in β-Ga2O3 to be boosted by aluminium-alloyed heterostructure
ZF said to be withdrawing from Wolfspeed’s German silicon carbide device fab project
Rethink follows Wolfspeed delaying project, says Reuters
TI adds 200mm GaN power semiconductor production in Japan, quadrupling internal capacity
Development of GaN manufacturing on 300mm wafers piloted
Infineon launches first 2000V SiC Schottky diode
Complement for CoolSiC MOSFETs 2000V offers high efficiency and design simplification in DC link systems up to 1500VDC
Northeast Microelectronics Coalition Hub awards $1m to 13 companies
Awardees include Finwave and Princeton Innotech
Navitas introduces IntelliWeave digital control technique for AI data centers
GaNSafe and Gen 3-Fast SiC MOSFETs enable 99.3% PFC peak efficiencies and 30% reduction in power losses
Cambridge GaN Devices showcasing ICeGaN at ECCE 2024
Demos highlight power electronics applications
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