AES Semigas

Honeywell
29 October 2026

Wolfspeed agrees multi-year deal to supply 1200V silicon carbide devices to BorgWarner

Long-term agreement supports 800V SiC-based inverter platform

27 October 2026

SemiQ makes available Gen4 1200V and 750V SiC MOSFETs

GP4T011A120H cuts on-resistance by 21% and switching energy by 11%

27 October 2026

EPC adds two three-phase inverter evaluation platforms to 100V GaN motor drive portfolio

Evaluation boards accelerate development of compact, high-efficiency motor drives

27 October 2026

Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe

Austrian state funding of €319m under European Chips Act part of €1.1bn investment in Villach

26 October 2026

Infineon supplying world’s first 900V GaN monolithic BDS devices to Enphase

CoolGaN 900V monolithic BDS to be used in IQ Solid-State Transformer for AI data centers

23 October 2026

Vertical Semiconductor gains $73m in US CHIPS Act funding

Incentives to accelerate R&D on vertical GaN power transistors, unlock domestic production, and strengthen US in power infrastructure for AI and HPC

23 October 2026

ST extends MasterGaN integrated transistor/driver family

MasterGaN7 devices contain 650V e-mode GaN transistors with 6A maximum current rating

22 October 2026
Thermal benefit of GaN-on-W power

Laser lift-off and transfer reduces thermal resistance by factor of 3.

Bruker
LayTec

Microelectronics UK

Book This Space