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Honeywell
13 November 2026

Navitas files further patent infringement lawsuit against Renesas

Renesas’ sued after launching REXGaN and 650V SuperGaN products

11 November 2026

Visteon, SHINRY and Infineon collaborate on single-stage onboard charger with GaN BDS technology

Single-stage architecture combines power conversion functions and eliminates bulk capacitors

11 November 2026

Nexperia expands SiC portfolio with 750V trench MOSFETs for high-efficiency power conversion

Low switching losses, temperature-stable RDS(on) and adding TOLL packaging improves efficiency, power density and thermal performance

10 November 2026

CGD partners with Ricardo on developing traction inverters for Nissan-led venture

UK-backed Project SUITE targets smarter, more efficient and convenient EVs

10 November 2026

Nexperia adds ultra-low-resistance GaN FETs for next-gen power density and efficiency

New 18V to 200V GaN devices offer RDS(on) down to 0.32mΩ in compact thermally enhanced packages for robotics, AI and renewable energy

10 November 2026

Mitsubishi Electric suppresses frequency dispersion in GaN transistors using GaN substrates

Details are being presented at the International Workshop on Nitride Semiconductors

10 November 2026

onsemi introduces EliteSiC M4 fourth-gen silicon carbide platform, with up to 30% higher power density and 35% lower losses

750V automotive traction bare die available now; voltage options up to 1200V expected in 2027

9 November 2026

Infineon presents first functional power devices on 300mm SiC wafers

Processed 300mm silicon carbide wafer being presented at electronica

Bruker
LayTec

Microelectronics UK

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