Microelectronics

22 May 2026

Navitas showcasing GaN and SiC-based solutions for AI data-center, energy and grid infrastructure, and industrial electrification at PCIM

Highlights include two SST solutions for converting MV grid to 800V HV DC, a 10kW, 800V-to-50V DC–DC full-brick platform, along with a 20kW 800V-to-6V power delivery board for AI data centers

22 May 2026

EPC showcasing GaN power solutions at PCIM

Compact motor drives and converters enable humanoids, drones and battery-powered tools

22 May 2026

Infineon adds devices to CoolGaN BDS 40V G3 family

Footprint reduced by up to 82% and component count halved for portable power designs

22 May 2026

Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D

Three-year project to develop UWBG semiconductors for high-power/high-frequency electronics and optoelectronics

22 May 2026

Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints

High-power half-bridge baseplate and scalable full-bridge baseplate-less modules target AI data centers and energy infrastructure

22 May 2026

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers

QDPAK top-side-cooled package supports high power density and low power loss in 800V HVDC architectures

22 May 2026

Sidewall gating of GaN HEMTs

22 May 2026

Infineon-led European project Moore4Power launches

‘More than Moore for Disruptive Innovations in Power Electronics’ to combine silicon, SiC and GaN with sensing, control and communication functions in heterogeneously integrated system