Selective-area emitter technology and device scaling yield record 30.5GHz fT and 7.01GHz fmax in GaN HBTs, with a first-reported S-band output power density of 16.5kW/cm2
Latest eGaN FETs, integrated power stages and evaluation boards enable Gen7 power delivery from 800VDC to point-of-load; monolithic GaN power stages enable higher efficiency and smaller size and weight in robots and drones