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Vertical Semiconductor gains $73m in US CHIPS Act funding
Incentives to accelerate R&D on vertical GaN power transistors, unlock domestic production, and strengthen US in power infrastructure for AI and HPC
ST extends MasterGaN integrated transistor/driver family
MasterGaN7 devices contain 650V e-mode GaN transistors with 6A maximum current rating
Laser lift-off and transfer reduces thermal resistance by factor of 3.
Navitas unveils UHV SiC power module for energy and grid infrastructure
2300V, 8mΩ full-bridge SiCPAK G power module leverages GeneSiC Trench-Assisted Planar technology
Infineon collaborates with NVIDIA on GaN-based power conversion systems for 800VDC AI data centers
Development centers on high-voltage intermediate bus converter
Guerrilla RF expands GaN design support and begins sampling new high-power devices
New GRF0005 and GRF0012 nonlinear models added to Modelithics COMPLETE Library; GRF0051, GRF0110 and GRF0150 now sampling for tactical radio, UAS and C-UAS applications
EPC’s GaN FETs enable 4kW high-efficiency buck-boost converter reference design
EPC2361 delivers high-current, low-loss switching in 36–65V input, 48V output platform
MRDI to lead operation of Hong Kong’s first national manufacturing innovation center
Microelectronics Research and Development Institute focuses on wide-bandgap semiconductors
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