AES Semigas

Honeywell
27 July 2026

First experimental demonstration of S-band large-signal performance for GaN HBTs

Selective-area emitter technology and device scaling yield record 30.5GHz fT and 7.01GHz fmax in GaN HBTs, with a first-reported S-band output power density of 16.5kW/cm2

24 July 2026

Navitas and Magnachip partner to accelerate high-voltage and ultra-high-voltage silicon carbide adoption

GeneSiC Gen 4 and Gen 5 SiC license spans 1200V, 2300V, 3300V and higher voltages

21 July 2026

EPC showcases Gen7 GaN solutions for AI data centers, robotics and drones at PCIM Asia

Latest eGaN FETs, integrated power stages and evaluation boards enable Gen7 power delivery from 800VDC to point-of-load; monolithic GaN power stages enable higher efficiency and smaller size and weight in robots and drones

21 July 2026

ABB to acquire silicon carbide-based power conversion firm Advantics

Addition to direct current portfolio targets energy expansion and data-center growth

20 July 2026

Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC

Reducing high-resistance GaN template MOCVD growth temperature increases carbon incorporation and reduces oxygen concentration

16 July 2026

Bosch gains $225m US CHIPS funding for $2bn transformation of Roseville fab for SiC production

Sample production begun, prior to first commercial chips on 200mm wafers this year

16 July 2026

WeEn launches 1200–2300V silicon carbide power modules

WMSC family offers enhanced efficiency, reliability and flexibility for PFC and DC–DC SSTs applications

15 July 2026

NextGO Epi raises €2m in pre-seed funding

Europe’s only gallium oxide semiconductor producer to accelerate product development, grow team, and strengthen commercial presence

Bruker
LayTec

Microelectronics UK

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