Microelectronics

22 October 2026

Thermal benefit of GaN-on-W power

Laser lift-off and transfer reduces thermal resistance by factor of 3.

21 October 2026

Navitas unveils UHV SiC power module for energy and grid infrastructure

2300V, 8mΩ full-bridge SiCPAK G power module leverages GeneSiC Trench-Assisted Planar technology

21 October 2026

Infineon collaborates with NVIDIA on GaN-based power conversion systems for 800VDC AI data centers

Development centers on high-voltage intermediate bus converter

20 October 2026

Guerrilla RF expands GaN design support and begins sampling new high-power devices

New GRF0005 and GRF0012 nonlinear models added to Modelithics COMPLETE Library; GRF0051, GRF0110 and GRF0150 now sampling for tactical radio, UAS and C-UAS applications

20 October 2026

EPC’s GaN FETs enable 4kW high-efficiency buck-boost converter reference design

EPC2361 delivers high-current, low-loss switching in 36–65V input, 48V output platform

19 October 2026

MRDI to lead operation of Hong Kong’s first national manufacturing innovation center

Microelectronics Research and Development Institute focuses on wide-bandgap semiconductors

16 October 2026

Power Integrations and Ideal Power collaborate on efficient, always-on solid-state circuit breakers

Combining 1700V InnoMux-2 ICs with B-TRAN switches for protection, control and power conversion in 800VDC AI data center infrastructure

16 October 2026

GlobalFoundries’ CHIPS Program award amended to support $5bn investment in Malta, NY, and Burlington, VT

$955m reallocated to accelerate investments in silicon photonics, SiGe, and advanced packaging