AES Semigas

Honeywell
17 April 2026
Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band
Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm Pout.
17 April 2026

Infineon’s rad-hard devices used aboard NASA’s Artemis II Orion capsule

JANS-qualified device is first internally manufactured rad-hard GaN transistor on market

16 April 2026

Quinas completes Innovate UK project advancing ULTRARAM for AI and neuromorphic computing

Project supports work toward ULTRARAM crossbar arrays and future chiplet-level integration

14 April 2026

EPC releases 5kW GaN 3-phase inverters for robotics and light EVs

EPC9186HC2 and EPC9186HC3 evaluation platforms enable high-current BLDC control up to 150ARMS using EPC2361 eGaN FETs

14 April 2026

Navitas appoints Gregory M. Fischer as independent director

Ex-Broadcom exec brings experience n in governance and business leadership

10 April 2026

QuInAs links device physics to AI system performance using ULTRARAM

Work presented at International Symposium on Quality Electronic Design

9 April 2026

HRL’s T3L 40nm GaN-on-SiC technology achieves Manufacturing Readiness Level 6

Process is compatible with three-dimensional heterogeneous integration architectures

7 April 2026

IVWorks raises $4.5m to expand reGaN technology into RF and AI power semi markets

Targeting E/W-band RF in satcoms and wireless backhaul, and expanding into AI power delivery through PoL converters for HBM and GPU platforms

Bruker
LayTec

Microelectronics UK

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