AES Semigas

Honeywell
23 June 2026
Increasing passivated AlGaN power
Researchers report 1.7x Baliga figure-of-merit enhancement for transistor on sapphire substrate.
22 June 2026

ASML, TSMC and imec present 300mm integration route for industry-ready 2D-material-based transistors

First scaled nFETs and pFETs with 50nm contacted poly pitch, patterned using EUV lithography

22 June 2026

IVWorks’ reGaN technology enables first 742GHz GaN HEMT

Kyungpook National University unveils 45nm GaN HEMT device at VLSI Symposium

22 June 2026
Monolithic bidirectional diamond switch
Researchers achieve 8.2mΩ-cm2 on-resistance and 290V breakdown.
19 June 2026

Munich District Court rules in favour of Infineon in patent infringement cases against Innoscience

Innoscience claims current GaN power device products unaffected by ruling

15 June 2026

CGD and NXP collaborate to accelerate time to market

Firms to deliver complete power conversion solutions for automotive and data-center markets

15 June 2026

Wolfspeed appoints Daniel Whalen as VP of investor relations

Recruit from Qorvo to enhance engagement with financial community

15 June 2026

China’s Supreme Court upholds injunction against Infineon, says Innoscience

Infineon prohibited from selling GaN products in mainland China

Bruker
LayTec

Microelectronics UK

Book This Space