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Guerrilla RF launches flagship linear PA module for 4.4–5.2GHz band
35+dBm output power, 50%+ efficiency and fully integrated 50Ω input and output matching combined in a compact surface-mount package
Imec adds high-density MIMCAPs, passive modeling and laser-assisted bonding to 300mm RF silicon interposer platform
System-level platform for heterogeneous integration of III V chiplets on Si CMOS targets mmWave/sub THz wireless and high speed data-center applications
Northrop Grumman develops market-ready GaN chip for W-band RF in under six months
Project supported by Microelectronics Commons California DREAMS hub
EPC launches smallest GaN drive based on EPC33110 for robots and drones
23mm GaN inverter achieves 11ARMS continuous current at 48V and 100kHz PWM
EPC2378 25V, 410µΩ eGaN enters mass production for high-density DC–DC conversion
Combining ultra-low RDS(on) and fast switching for compact power designs
onsemi launches GaNEXUS gallium nitride power portfolio
Faster switching speeds, lower switching losses, higher power density, and improved thermal performance for next-generation power architectures
Guerrilla RF expands focus on tactical radio market
New Tactical Radio Solutions Guide debuted at IMS2026
Nexperia expands 650V industrial-grade high-power GaN FET portfolio
Multiple RDS(on) classes and industry-standard packages enable flexible, high-efficiency system design
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