AES Semigas

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28 June 2024

SMC opens second power MOSFET and diode fab in Nanjing

Capacity quadrupled, incuding end-to-end production of SiC products for the first time

27 June 2024

Nexperia investing $200m in Hamburg site to add wide-bandgap semiconductors

R&D and production of GaN and SiC to be added to expansion of silicon production to 200mm wafers

27 June 2024

Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A

MPS design yields lower forward voltage drop, capacitive charge and reverse leakage current, boosting efficiency and reliability for switching power designs

26 June 2024

SK keyfoundry intensifying efforts to develop GaN for power electronics

Development of 650V GaN HEMTs by end-2024, prior to portfolio spanning GaN and SiC power semis

26 June 2024

IEEE’s 2nd Wide Bandgap Power Devices in Europe conference being held in South Wales

WiPDA-Europe 2024 co-hosted by Cardiff University and CSA Catapult

25 June 2024

Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization

June quarter to see under-utilization impact from equipment incident at Durham 150mm fab

21 June 2024

Navitas’ GaNFast power ICs used in Lenovo’s Xiaoxin 105W and Legion C170W fast chargers

New high-speed GaN chargers designed for daily travel and gaming

21 June 2024

TI and Delta collaborating on EV on-board charging

Joint innovation lab to enable Delta to leverage TI’s digital control and GaN technology to enhance power density and performance of EV power systems

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