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Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC
Reducing high-resistance GaN template MOCVD growth temperature increases carbon incorporation and reduces oxygen concentration
Bosch gains $225m US CHIPS funding for $2bn transformation of Roseville fab for SiC production
Sample production begun, prior to first commercial chips on 200mm wafers this year
WeEn launches 1200–2300V silicon carbide power modules
WMSC family offers enhanced efficiency, reliability and flexibility for PFC and DC–DC SSTs applications
NextGO Epi raises €2m in pre-seed funding
Europe’s only gallium oxide semiconductor producer to accelerate product development, grow team, and strengthen commercial presence
Infineon introduces rad-hard GaN HEMT driver
RIC70115 targeted at satellite and hi-rel space applications
EPC showcasing GaN power innovation at Tech Taipei Power 2026
Industry keynote highlights AI-driven power trends, 800VDC architectures, and GaN innovation
Navitas refutes Wolfspeed’s allegations of patent infringement
Firm will “vigorously defend itself and its products”
PVA TePla and Fraunhofer IISB establish Joint Lab for aluminium nitride substrates
Small-batch production of 2-inch monocrystalline AlN for R&D to precede 4- and 6-inch
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