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PVA TePla and Fraunhofer IISB establish Joint Lab for aluminium nitride substrates
Small-batch production of 2-inch monocrystalline AlN for R&D to precede 4- and 6-inch
Infineon supplying CoolSiC MOSFETs 1200V and gate drivers to ADVANTICS
Silicon carbide enhancing efficiency in power converters for megawatt charging
Wolfspeed files patent infringement lawsuit in US against Navitas
Accused product lines include GaNFast, GaNSlim and GaNSafe families and GeneSiC MOSFETs and SiCPAK modules.
US ITC’s final determination on Infineon vs Innoscience upheld after review
Innoscience’s patent-infringing GaN products banned from USA
Munich Court bars Innoscience from importing products into Germany that infringe Infineon’s patent
Innoscience ordered to pay damages to Infineon
Innoscience secures removal of court-enjoined Infineon GaN products from electronica China
On-site IP dispute mediation authorities intervene after Supreme Court upholds injunctions
Dynex introduces 450A, 650V GaN half-bridge power module
Planar PCB embedding technology minimizes parasitic inductance, and double-sided-cooled planar package structure minimizes thermal resistance
Gartner names Infineon as company to beat in AI data-center power semiconductors
Position being tested by growing competition in SiC and GaN
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