AES Semigas

Honeywell
11 June 2026

Imec adds high-density MIMCAPs, passive modeling and laser-assisted bonding to 300mm RF silicon interposer platform

System-level platform for heterogeneous integration of III V chiplets on Si CMOS targets mmWave/sub THz wireless and high speed data-center applications

11 June 2026

Northrop Grumman develops market-ready GaN chip for W-band RF in under six months

Project supported by Microelectronics Commons California DREAMS hub

10 June 2026

EPC launches smallest GaN drive based on EPC33110 for robots and drones

23mm GaN inverter achieves 11ARMS continuous current at 48V and 100kHz PWM

10 June 2026

EPC2378 25V, 410µΩ eGaN enters mass production for high-density DC–DC conversion

Combining ultra-low RDS(on) and fast switching for compact power designs

10 June 2026

onsemi launches GaNEXUS gallium nitride power portfolio

Faster switching speeds, lower switching losses, higher power density, and improved thermal performance for next-generation power architectures

10 June 2026

Guerrilla RF expands focus on tactical radio market

New Tactical Radio Solutions Guide debuted at IMS2026

10 June 2026

Nexperia expands 650V industrial-grade high-power GaN FET portfolio

Multiple RDS(on) classes and industry-standard packages enable flexible, high-efficiency system design

10 June 2026

Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs

Top-side-cooled SMD package provides practical route to higher power density and system efficiency while simplifying heatsink and mechanical integration

Bruker
LayTec

Microelectronics UK

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