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Coherent and Mitsubishi Electric collaborating to scale manufacturing of silicon carbide power electronics
Coherent to develop 200mm n-type 4H-SiC substrates for new Mitsubishi Electric power devices fab
Sivers Semiconductors raises a further SEK100moul Semiconductor unveils second-generation LED technology at Display Week
SEK75m in financing plus SEK25m credit add to SEK150m share issue in April
Navitas prices public offering to raise $80m, plus $12m option
Some proceeds may be used for further acquisitions or strategic manufacturing investments
EPC sues Innoscience at ITC for GaN power device patent infringement
EPC seeks damages and ban on import of Innoscience GaN products into USA
Navitas’ GeneSiC MOSFETs adopted for Exide’s industrial high-frequency chargers
Silicon carbide boosts efficiency and reduces temperature
QPT’s modules enable GaN to operate at up to 20MHz without overheating or RF issues
New application areas opened up for GaN power electronics
CGD introduces Application Interface Boards for trying out ICeGaN HEMTs in existing designs without PCB re-layout
Available for industry-standard MOSFET and GaN devices; other adaptors available in four weeks
Transphorm wins $15m contract from US National Security Technology Accelerator
ECLIPSE project to establish GaN epi production and supply
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