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Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors
InGaAs-on-silicon HEMT with gate-length of 20nm enables 11 ± 2dB gain at 4–420GHz
Wise Integration’s digital control technology to combine with Navitas’ wide-bandgap technologies
Collaboration to advance performance computing applications for AI PCs, high-end workstations, gaming desktops and industrial systems
Toshiba launches 3300V SiC MOSFET module
High-surge-current capability helps to improve industrial equipment reliability
Qorvo achieves key X-band GaN milestone in DARPA THREADS program
Results at end of DARPA THREADS program’s Phase I precedes follow-on work in Phase 2
onsemi unveils Embedded Power Platform
Architecture uses silicon wafer as package and introduces highly integrated approach to power system design
ROHM’s silicon carbide used in electric powertrain of BMW’s ‘Neue Klasse’ Gen 6 EVs
SiC MOSFETs boost driving range, charging performance, and energy efficiency
Altum RF showcasing products and expertise at EuMW
E-band family of power amplifiers and low-noise amplifiers highlighted at European Microwave Week
EPC issues white papers on GaN power conversion for AI data centers and advanced motor drives
Papers examine 800VDC power delivery for AI infrastructure and integrated 100V GaN power stages for robotics, drones, and precision motion control
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