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RF Micro Devices Inc of Greensboro, NC, USA has expanded its RF product portfolio to include microwave and millimeter-wave components. The new products include gallium arsenide pseudomorphic high-electron-mobility transistor (pHEMT) gain blocks and low-noise amplifiers (LNAs) targeting the wireless infrastructure market.

The pHEMT gain blocks are microwave monolithic-microwave integrated circuits (MMICs) targeting the microwave point-to-point communications segment of wireless infrastructure markets. The multi-purpose pHEMT amplifier MMICs support all wireless applications in the 1-16GHz frequency range, and applications include gain blocks up to 5W, satellite communications and point-to-point and point-to-multi-point radio link systems. The pHEMT LNAs are packaged field-effect transistors (FETs) supporting low-noise and medium-power amplifier applications in the 0.5-18GHz frequency range, and applications include base-station systems, terrestrial satellite communications and short-haul telecoms.

RFMD’s ability to leverage core capabilities, such as RF design expertise, enables it to target new customers in new markets, including the high-value wireless infrastructure and point-to-point markets, says John Pelose, general manager of RFMD’s Wireless Infrastructure business unit.

The firm says that it intends to grow its RF product portfolio through the introduction of more than 100 new products in fiscal 2009. In addition to wireless infrastructure, new products will support aerospace & defense, wireless LAN (WLAN), WiMAX, consumer, cable TV and other target markets.

RFMD’s wireless infrastructure product portfolio includes base-station products for the WCDMA, EDGE, GSM/GPRS, CDMA and TD-SCDMA air interface standards, as well as microwave point-to-point radios. Products include gain blocks, LNAs, VCO modules, PLL modules, pre-driver and driver amplifiers, modulators, isolators and circulators, LDMOS and GaN high power devices and custom, up-conversion and down-conversion multi-chip modules.

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