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6 October 2026

Skyworks completes combination with Qorvo

Expanded technology portfolio spans RF, power management, and analog and mixed-signal

6 October 2026

Renesas adds first 100V E-mode FETs to low-voltage GaN portfolio

New power transistor family delivers up to 35% lower hard-switching and 63% lower soft-switching figures-of-merit

6 October 2026

SawStreet joins WIN Alliance Partner Program

Backend specialist provides additional US source for wafer grinding, thinning, dicing, pick-and-place and die inspection

6 October 2026

Greece’s METLEN signs second long-term commercial gallium supply agreement

Japanese chemical customer to take 16% of scheduled annual production starting Q3/2027

5 October 2026

Navitas and Microchip collaborate on 800V reference design for AI data centers

Digital power control, GaN technology and hardware-based security combined to accelerate development of high-efficiency rack power systems based on 800V DC OCP standard

5 October 2026

Cardiff Capital Region’s £160m 10-year Investment Zone program moving into delivery

Program to build on South-East Wales’ compound semiconductor cluster

5 October 2026

Far-UVC LEDs transmit data at record speed of 1.5Gbps

FBH-developed far-UVC LEDs used by universities of Strathclyde and Cambridge to build and test optical wireless communication system

5 October 2026

JEDEC publishes first industry-wide silicon photonics reliability standard

Standard aims to reduce deployment risk and support broader adoption for AI, data-center and telecom infrastructure

1 October 2026

Intrinsic polarization superjunctions

Lateral iPSJ diodes and transistors achieve highest V_BR among reported GaN-on-Si devices.

1 October 2026

Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers

Package footprint shrunk by 57% versus TOLT, with low on-resistance of 20mΩ

1 October 2026

Starlab secures payload reservation from Elethron

Autonomous in-space materials-processing platform to be deployed aboard ISS replacement

30 September 2026

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month see latest issue

18 September 2026

In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026

TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026

Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum

27 August 2026

Thin p-GaN ohmic contact formation

Researchers propose ultrathin magnesium deposition and brief thermal annealing to reduce resistance.

20 August 2026

Weak polarization electric-field c-plane GaN LEDs

Researchers achieve 15% EQE in manufacturable structure.

13 August 2026

Electrochemical GaN HEMT exfoliation

Silicon substrate release method results in less than 2nm roughness of etched surfaces.