1 May 2026
Single- and multi-channel AlScN barriers
GaN channel heterostructures achieve a record 45Ω/□ sheet resistance.
1 May 2026
Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band
Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm Pout.
1 May 2026
Power electronics market to grow at 10% CAGR to over $65bn by 2036
Wide-bandgap semiconductors are supporting higher-voltage operation and new power architectures across data centers, EVs and renewables, notes IDTechEx.
1 May 2026
Red InGaN micro-LEDs with narrow FWHM and high EQE
Researchers use a photonic crystal structure to achieve 5nm linewidth and 12% external quantum efficiency.
1 May 2026
Micro-LED transfer via electrochemical etch
UCSB researchers transfer arrays of devices down to 3μm onto silicon.
1 May 2026
Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.
31 March 2026
ALP-4-SiC project focusing on atomic layer processing for silicon carbide-based quantum photonic circuits
Max Planck Institute is designing and characterizing photonic components while Fraunhofer IISB contributes SiC technology.
31 March 2026
Compound semiconductor materials market growing at 14% CAGR to almost $5.2bn by 2031
Yole highlights a sustained structural growth phase as compound semiconductor materials are becoming core to power electronics, photonics and AI infrastructure.







