20 February 2024

Coherent’s Mattera to retire as CEO

Board retains executive search firm to identify new CEO

20 February 2024

GlobalFoundries gains $1.5bn in CHIPS and Science Act funding

Projects to expand New York fab, build new fab, and upgrade Vermont fab for high-volume GaN manufacturing

19 February 2024

Veeco’s Q4 semiconductor revenue up 17% sequentially

Compound Semi focus in 2024 on investment in evaluation systems

16 February 2024

BluGlass and Applied Energetics sign MoU to collaborate

GaN DFB lasers to be used in advanced systems for national security, aviation and commercial applications

15 February 2024
Probing InGaN RGB micro-LEDs on silicon
Researchers seek to guide future improvements.
13 February 2024

UK tech firms start commercial negotiations at SEMICON Korea

Government-funded UK–APAC Tech Growth Programme introduces tech scale-ups to potential Korean customers and partners

13 February 2024

CSA Catapult’s achievements over 2018–2023 outlined in independent report

Three-quarters of projects make gain in Technology Readiness Levels

13 February 2024

BluGlass secures $4.3m via share placement, and launches share purchase plan offer to raise up to $9m

Funds to be used for product delivery, fab equipment, working capital and product development

12 February 2024

Bami Bastani appointed executive chairman of Sivers Semiconductors Inc

Strategic advisor also nominated as chairman of Sivers Semiconductors AB

12 February 2024

Lumentum’s quarterly revenue falls 27.5% to $366.8m

Cloud & AI data-center demand to drive recovery from September quarter

9 February 2024

Qorvo’s quarterly revenue up 44.5% year-on-year

March quarter seeing growth in end-market demand in Android ecosystem

9 February 2024

Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar

Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes

AFC Industries
Pfeiffer Vacuum
ETA Research
News Features
9 February 2024
Fully vertical GaN-on-SiC Schottky barrier diodes with low on-resistance
Replacing complex buffer with ultrathin AlGaN significantly enhances performance.
1 February 2024
Green photonic-crystal surface-emitting lasers
Hopes for improved single-mode, low-divergent beam quality at higher power.
25 January 2024
Carbon removal for boosting GaN electron mobility
Researchers report record maximum and room-temperature values and explore carbon impact on mobility.
18 January 2024
UCSB reports first N-polar InAlGaN HEMT
Researchers demonstrate devices with very low 179Ω/square sheet resistance channel.
11 January 2024
Virtual body concept for 650V GaN-on-silicon ICs
Technique suppresses dynamic on-resistance and substrate-induced cross-talk between transistors.
5 January 2024
Lateral polarity structure GaN Schottky barrier diodes
Selective wet etching of N-polar material reduces reverse leakage through mesa sidewalls.
Feature Downloads
1 February 2024

More players exhibiting a common IP strategy for power & RF GaN technologies
KnowMade surveys the GaN electronics patent landscape in 2023.

1 February 2024

Record frequency AlGaN-channel transistors
Cornell University has reported 67GHz unit-gain cut-off frequency and 166GHz maximum oscillation frequency.

1 February 2024

Laser-assisted separation for freestanding GaN
Reducing the contact area between sapphire and GaN results in spontaneous release during cooling after growth.

1 February 2024

Full-color active-matrix micro-LED micro-displays
Flip-chip-bonded micro-LED arrays feature 391 pixels per inch (ppi) density and “decent” color gamut.

1 February 2024

Stacking p-down green LEDs using tunnel junctions
Reducing injection current is shown to enhance wall-plug efficiency.

1 February 2024

Nickel nanoparticle lift to p-GaN-free deep-UV LEDs
Lower contact resistance and higher light extraction give cooler-running chips and longer-life performance.

28 December 2023

Fully in-situ roughening for ultrathin III–V solar cells
Increased light trapping boosts short-circuit current by 5%.

28 December 2023

First droplet epitaxy of InAs quantum dots on InGaAsP quaternary alloy
Light emission spans the low-loss C-band as well as other important telecom optical-fiber wavelengths.