Honeywell
30 September 2026

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month see latest issue

29 September 2026

UK launches Semiconductor Catapult to strengthen sovereign capabilities in AI hardware and defense

Design, development, integration, advanced packaging, test and validation to provide end-to-end solutions for complete products, leveraging UK supply chains for silicon and compound semiconductors

29 September 2026

Arkansas Research Institute for Electronics Systems launched

ARIES to develop, produce and deploy next-gen power electronics and semiconductors

29 September 2026

Navitas awarded ALATTIS US Army project to develop 10kV power semiconductors

Accelerated, Large-Area, 10kV SiC IGBT program targets resilient US-anchored manufacturing supply chain

28 September 2026

Silicon photonics and InP photonic integrated circuit market to grow to $48bn by 2036

Acceleration of silicon photonics adoption requires simpler, externally modulated CW lasers

28 September 2026

Wolfspeed adds Premium power substrates to 200mm silicon carbide portfolio

Multi-metric leap in quality enables better device yield

28 September 2026

Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors

InGaAs-on-silicon HEMT with gate-length of 20nm enables 11 ± 2dB gain at 4–420GHz

28 September 2026

Riber’s first-half revenue grows 19% year-on-year to €12.7m

Growth returns firm to profitability

28 September 2026

Wise Integration’s digital control technology to combine with Navitas’ wide-bandgap technologies

Collaboration to advance performance computing applications for AI PCs, high-end workstations, gaming desktops and industrial systems

25 September 2026

Toshiba launches 3300V SiC MOSFET module

High-surge-current capability helps to improve industrial equipment reliability

25 September 2026

PicoJool raises $27.5m in Series A round led by Socratic Partners, joined by HRT

Funding to accelerate commercialization of 200G, 50G micro-VCSELs, and optical connectivity products for AI infrastructure

24 September 2026

Qorvo achieves key X-band GaN milestone in DARPA THREADS program

Results at end of DARPA THREADS program’s Phase I precedes follow-on work in Phase 2

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News Features
18 September 2026
In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026
TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026
Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum

27 August 2026
Thin p-GaN ohmic contact formation

Researchers propose ultrathin magnesium deposition and brief thermal annealing to reduce resistance.

20 August 2026
Weak polarization electric-field c-plane GaN LEDs

Researchers achieve 15% EQE in manufacturable structure.

13 August 2026
Electrochemical GaN HEMT exfoliation

Silicon substrate release method results in less than 2nm roughness of etched surfaces.

Feature Downloads
30 September 2026

Power GaN device market growing at 35% CAGR to $3.5bn in 2031, driven by data centers, EVs and industrial systems
From charging to AI: power GaN devices are entering a broader, multi-market adoption cycle, says Yole.

30 September 2026

Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC
Reducing high-resistance GaN template MOCVD growth temperature increases carbon incorporation and reduces oxygen concentration

30 September 2026

GaN HEMT short-circuit performance
Device achieves record 629μs withstanding time.

30 September 2026

RF GaN patenting activity slowing as technology matures
…but intensifying in selected segments and regions, says KnowMade.

30 September 2026

Weak polarization electricfield c-plane GaN LEDs
Researchers achieve 15% external quantum efficiency in a manufacturable structure.

30 September 2026

Reducing micro-LED sidewall impact
Neutral reactive N/H treatment increases EQE in 5μm GaN device by 34%.

30 September 2026

First continuous-wave UV VCSEL operation at room temperature
A new device design benefits from reduced optical losses and improved thermal dissipation.

30 September 2026

More thermally stable InP quantum dot near-infrared laser diodes
Researchers achieve a high T0 characteristic temperature of 125K at 780nm.