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8 June 2023

AlScN ferroelectric FETs for monolithic 3D NVM integration

Structure could increase device density and boost data processing speeds.

8 June 2023

Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules

New chip structure prevents surge-current crowding in specific chips

7 June 2023

ST and Sanan creating 200mm SiC device fab JV in China

Sanan to build 200mm SiC substrate plant to feed JV

7 June 2023

Smartphone production falls by record 19.5% year-on-year to ten-year quarterly low of 250 million units in Q1/2023

Q2 to rebound by 5% to 260 million, but still down 10% year-on-year

6 June 2023

Navitas announces full exercise of underwriters’ option to purchase additional shares

Gross proceeds of public offering rise from $80m to $92m

5 June 2023

Nidec and Renesas collaborate on SiC and GaN for EV E-Axle systems

Proof of concept by end-2023 to feature 6-in-1 system with DC–DC converter, OBC and power distribution unit as well as motor, inverter and gearbox

5 June 2023

CEA-Leti proof of concept demonstrates higher electrons mobility in germanium tin than in silicon or germanium

Vertical GeSn transistors may enable low-power, high-performance chips and quantum computers

2 June 2023

New Space Enterprise Lab opens at CSA Catapult in South Wales

Lab to provide collaborative technology, resources and expertise to space organizations and academic institutions

2 June 2023

GeSn VCSE p-i-n diodes bonded on 200mm silicon wafers

Vertical-cavity enhances emissions by factors up to 8

1 June 2023

NUBURU and GE Additive sign joint development agreement

Blue laser technology to improve speed and accuracy of laser-based metal additive manufacturing

1 June 2023

After 23% drop in 23% in 2022, LED chip market to rebound by 5% to $2.92bn in 2023

Prices of low-power light chips to surge by 3–5%

1 June 2023

MACOM completes acquisition of OMMIC

Facility to be foundation of new European Semiconductor Center

25 May 2023

InAs quantum dot lasers on silicon carbide substrate

Laser diodes show enhanced thermal stability with 221K characteristic temperature.

18 May 2023

All-MOCVD 980nm laser on (001) silicon

Potential for optical fiber and IP network communication systems

11 May 2023

Record sub-micron LED red emission efficiency

Device external quantum efficiency reaches 8.3% at 1A/cm2 injection.

4 May 2023

Thick single quantum well InGaN LEDs with high external quantum efficiency and low droop

Optimized doped barriers used to reduce internal electric fields.

27 April 2023

InAs quantum dot lasers butt-coupled to SOI waveguides

Researchers claim first monolithic epitaxial growth on SOI templates.

21 April 2023

Red InGaN LEDs for visible light communication

Performance shifts with current injection could also lead to color displays