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Honeywell
8 June 2026

Infineon’s silicon carbide power modules to be used in Siemens’ semiconductor circuit breakers

Enhancing efficiency, power density and reliability of electrical protection in data centers, factories and battery storage systems

8 June 2026

Fraunhofer IAF presents innovations at PCIM

1200V GaN-based power electronics module used in demonstrator of bidirectional, single-phase 800V DC off-board EV charging system

8 June 2026

onsemi’s role in NVIDIA MGX ecosystem expanding into 800VDC power architectures

Infrastructure power demands accelerating in increasingly compute-dense AI environments

5 June 2026

South Wales cluster CSconnected issues SIPF program impact report

Last five years show 36% rise in direct employment and 51% rise in Welsh jobs supported, supporting £436m in Welsh gross value-added

5 June 2026

CSA Catapult translates research into double pulse testing

Service for up to 1.5kV and 1kA operation; 25–150°C; automated across voltage, current, temperature and gate resistance matrices; discrete devices and multi-device power modules

5 June 2026

Kyocera to acquire Ushio’s laser diode business

Ushio’s GaAs-based red lasers to complement Kyocera’s GaN-based lasers for RGB applications

5 June 2026

Atomera’s MST-enabled GaN-on-Si devices reduce parasitic interface charge by order of magnitude

Incize’s RF characterization shows significant reduction in RF losses

4 June 2026

ElementUSA and Colorado School of Mines awarded $67m by DOE for construction of rare-earth processing plant

Award builds on ElementUSA’s $29.9m project with Department of War focused on gallium and scandium recovery and commercialization

4 June 2026

Mitsubishi Electric to ship 5th-generation trench SiC MOSFET bare die samples

On-resistance cut by 25% from 4th-generation trench SiC MOSFETs, boosting xEV power efficiency

4 June 2026

RTX’s Raytheon awarded $515m contract for GaN-based SPY-6 family of radars

Contract accelerates integration and test support for US Navy’s maritime radar

4 June 2026

AI data-center expansion to drive monthly capacity of EML and CW-DFB lasers to 50.7 million in 2026

Broadcom, Lumentum and Sumitomo Electric to comprise 55% of market, says TrendForce

4 June 2026

Indium Corp and Ames National Lab team to establish US gallium supply chain

Indium Corp to provide US resin testbed; Ames Lab to synthesize materials up to the hundreds-of-grams scale

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News Features
21 May 2026
Sidewall gating of GaN HEMTs
Structure gives highest enhancement-mode threshold of +4V.
21 May 2026
Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with view to future near-eye applications
14 May 2026
Red InGaN micro-LEDs with narrow FWHM and high EQE
Researchers use photonic crystal structure to achieve 5nm linewidth and 12% efficiency.
17 April 2026
Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band
Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm Pout.
17 April 2026
Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.
26 March 2026
Single- and multi-channel AlScN barriers
GaN channel heterostructures achieve a record 45Ω/□ sheet resistance.
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Feature Downloads
1 June 2026

Monolithic bidirectional diamond switch
Researchers achieve an on-resistance of 8.2mΩ-cm2 and a breakdown voltage of 290V for devices based on two-dimensional hole gas structures.

1 June 2026

Smartphone shipments grow 1% year-on-year in Q1/2026 to 298.5 million units
…but correction expected in Q2 and second-half 2026, says omdia.

1 June 2026

Taking heat off AlGaNchannel HEMTs
Researchers report record thermal performance.

1 June 2026

Sidewall gating of GaN HEMTs
Structure gives highest enhancement-mode threshold of +4V.

1 June 2026

Tunnel-junction micro-LEDs with 45% wall-plug efficiency
Researchers avoid post-growth thermal p-GaN activation.

1 June 2026

Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with a view to future near-eye applications.

1 May 2026

Micro-LED transfer via electrochemical etch
UCSB researchers transfer arrays of devices down to 3μm onto silicon.

1 May 2026

Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.

Features Archive >