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11 October 2024

PhotonVentures Fund I receives €5m investment from Invest-NL

National financing and development institution joined by group of new private investors

11 October 2024

TriEye and HLJ unveil joint SWIR sensing and imaging solution

Collaboration demos CMOS-based SWIR sensors and 1135nm VCSEL technology

11 October 2024
Double V-pits enhance red InGaN LED internal quantum efficiency
Researchers report IQE value of 21.5%.
11 October 2024

Infineon and AWL-Electricity partner to improve wireless power

GaN transistors being used in MHz resonant capacitive coupling power transfer system

10 October 2024

UKRI grants £5.5m for new Responsible Electronics and Circular Technologies Centre

REACT coordinated by University of Glasgow in collaboration with University of Edinburgh, Heriot-Watt University and CSA Catapult

9 October 2024

PhotonDelta launches engineering contest to drive photonic chip applications

imec, LioniX, SMART Photonics, PHIX Photonics Assembly, Epiphany and Bright Photonics to transform winning idea into reality

9 October 2024

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

8 October 2024

Lynred acquires SWIR imaging provider New Imaging Technologies

Product portfolio expands to include large-format shortwave sensors with small pixel pitch

8 October 2024

NUBURU secures strategic $65m funding program to accelerate commercialization

Funding includes $15m PIPE investment and $50m equity line of credit

7 October 2024

Penn State and UCSB team gain three-year, $2m NSF Future of Semiconductors grant

Heterogeneous integration of high-speed silicon IC, glass packaging and InP amplifier targets 6G wireless communications and sensing

4 October 2024

UK project to facilitate secure quantum key distribution with high-performance OEM receiver modules

Phlux to provide Noiseless InGaAs APD sensors for four-channel single-photon avalanche detector

3 October 2024

HyperLight raises $37m in Series B funding round to accelerate product development and meet demand

Summit Partners’ CEO joins board of TFLN PIC firm

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ETA Research
News Features
27 September 2024
Hydrogen plasma passivation for blue laser diodes
Researchers claim the first use for a strategy resulting in enhanced power efficiency and thresholds.
23 September 2024
Tunnel-junction-enabled GaN heterojunction bipolar transistors
Structure allows all contacts to be made with n-type GaN.
13 September 2024
Transfer-printed lasers on silicon photonics
Improved alignment from fabrication after transfer.
5 September 2024
DBR-free thin-film InGaN VCSELs
Device achieves lasing without lateral confinement under optical pumping.
29 August 2024
Micro-LEDs on freestanding GaN
Optimized MQW increased external quantum efficiency from 7.9% to 14.8% at 10A/cm2 injection.
23 August 2024
High-current vertical diamond MOSFETs
Researchers achieve drain currents above 1A by connecting two devices.
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Feature Downloads
9 October 2024

ETRI develops p-type selenium-tellurium alloy transistor
South Korea’s Electronics and Telecommunications Research Institute shows how it is possible to overcome the low mobility of p-type semiconductors while improving display refresh rates and power consumption.

9 October 2024

Magnesium intercalation in gallium nitride
Superlattices of 2D monolayers show record high strain, enhancing hole transport.

9 October 2024

TMAl reflow GaN-on-silicon for fully vertical electronics
Avoiding intentional AlN buffer growth enables high current flow through GaN/Si interface.

9 October 2024

Zinc oxide homojunction LEDs
Nanoparticles provide hole injection into a pn-junction.

9 October 2024

Strain-engineering for green LEDs on silicon
Using single AlN buffer increased internal quantum efficiency from 33% to 78%.

9 October 2024

Red/yellow InGaN micro-LED photodetectors for visual light communications
Researchers demonstrate high-data-rate reception from white LED transmitters.

2 September 2024

Near size-independent UV-A micro-LED performance
Researchers claim record for on-wafer EQE from sub-10μm device.

2 September 2024

Comparison between MBE and MOCVD technologies
Richard Hogg, III-V Epi chief technology officer and professor of Photonics at Aston Institute of Photonics Technology (AIPT), and Dr Neil Gerrard, III-V Epi director of epitaxy, explore the III-V semiconductor synthesis applications that each epitaxial growth technology best suits.

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