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12 September 2024

JEDEC publishes test method for addressing switching energy loss associated with output capacitance hysteresis

Document applies to both wide-bandgap and silicon power devices

11 September 2024

Infineon pilots first 300mm power GaN wafer technology on existing large-scale 300mm silicon line

300mm gallium nitride to help achieve cost parity with silicon

10 September 2024

Soitec kicks off European project Move2THz to develop future high-frequency InP-based semiconductors

Applications span photonics for mega data centers and AI to RF front-ends and integrated antennas for 6G mobile communication and sub-THz radar sensing

10 September 2024

Broadcom producing RF FEMs for Wi-Fi 7 mobile based on Tower’s 300mm RFSOI

Technology delivers enhanced mobile connectivity performance and efficiency

10 September 2024

GlobalFoundries joins Silicon Catalyst as partner to speed start-ups’ technology development

GF joins incubator’s ecosystem as both a strategic and in-kind partner

10 September 2024

Wolfspeed unveils 2300V baseplate-less SiC power modules for 1500V DC bus applications

Partnership formed with utility-scale inverter manufacturer EPC Power

9 September 2024

ROHM and UAES sign long-term supply agreement for SiC power devices

Firms deepen collaboration, accelerating development of SiC power solutions for EVs

9 September 2024

Shin-Etsu Chemical to develop QST substrate for 300mm GaN

Existing 150mm and 200mm QST substrate range extended to 300mm

5 September 2024

Applied Ventures and ITIC-Taiwan join Wise-integration’s Series B funding round

AVITIC adds to €15m raised February

5 September 2024
DBR-free thin-film InGaN VCSELs
Device achieves lasing without lateral confinement under optical pumping.
5 September 2024

NUBURU partners with Ohio State’s CDME to showcase blue lasers in additive manufacturing

BlueScan technology to be installed in powder bed fusion system

4 September 2024

Japan’s NCT gains NEDO funding for project to develop β- Ga2O3 wafers, power devices and power modules

Novel Crystal Technology collaborating with Mitsubishi Electric and Japan Fine Ceramics Center

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AFC Industries
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Pfeiffer Vacuum
ETA Research
News Features
29 August 2024
Micro-LEDs on freestanding GaN
Optimized MQW increased external quantum efficiency from 7.9% to 14.8% at 10A/cm2 injection.
23 August 2024
High-current vertical diamond MOSFETs
Researchers achieve drain currents above 1A by connecting two devices.
9 August 2024
Red/yellow InGaN micro-LED photodetectors for visual light communications
Researchers demonstrate high-data-rate reception from white LED transmitters.
1 August 2024
Strain-engineering for green LEDs on silicon
Using single AlN buffer increased internal quantum efficiency from 33% to 78%.
24 July 2024
Nanoparticle-based zinc oxide homojunction LEDs
Nanoparticles provide hole injection into pn-junction.
18 July 2024
TMAl reflow GaN-on-silicon for fully vertical electronics
Avoiding intentional AlN buffer growth enables high current flow through GaN/Si interface.
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Feature Downloads
2 September 2024

Fraunhofer IAF uses MOCVD to fabricate aluminum yttrium nitride
Alternative to magnetron sputtering of AlYN opens up commercial applications of AlYN/GaN heterostructures.

2 September 2024

Gallium nitride HEMTs on 8-inch sapphire
Researchers seek to reduce production costs for devices with blocking voltages beyond 1200V.

2 September 2024

Etching-free pixel definition for InGaN micro-LEDs
Selective thermal oxidation proposed as viable alternative to plasma etch.

2 September 2024

Red InGaN micro-LED on silicon prospecting
Pioneers reach ultra-high 4232PPI resolution.

2 September 2024

Near size-independent UV-A micro-LED performance
Researchers claim record for on-wafer EQE from sub-10μm device.

2 September 2024

Comparison between MBE and MOCVD technologies
Richard Hogg, III-V Epi chief technology officer and professor of Photonics at Aston Institute of Photonics Technology (AIPT), and Dr Neil Gerrard, III-V Epi director of epitaxy, explore the III-V semiconductor synthesis applications that each epitaxial growth technology best suits.

5 July 2024

InP-on-insulator substrates for 2.1μm lasers on silicon
Ion-slicing technique could enable lower-cost production of optoelectronics.

5 July 2024

PCSEL emits at more than 300mW CW at 1550nm wavelength
Potential applications include communications and eye-safe LiDAR.

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