3 February 2024
High-breakdown-voltage P-GaN gate HEMTs with threshold voltage of 7.1V
Thermal oxidation treatment of P-GaN combined with atomic layer deposition prior to gate metal deposition
3 February 2024
Double-heterostructure gallium nitride for 5G FR2 mobile handsets
A GaN-on-silicon HEMT has achieved record saturated output power for low-voltage handset application.
3 February 2024
MESFETs on single crystal aluminium nitride substrate
Devices reach 2kV breakdown performance with short 15μm gate–drain distance.
3 February 2024
Boron enables AlN on silicon growth without cracks
Aluminium nitride layers have been produced with low dislocation density.
3 February 2024
Graded barriers bandwidth boost for micro-LEDs on silicon
Devices achieve a –3dB bandwidth (f–3dB) of 580MHz at 2000A/cm2.
3 February 2024
Indium phosphide laser on silicon nitride photonic circuit
Micro-transfer printing integration achieves wavelength tuning over 54nm in the C and L bands.
3 February 2024
CSA Catapult outlines steps to create UK semiconductor ‘super cluster’ and drive long term growth and exports
Recommendations include a National Semiconductor Institute, a Semiconductor Challenge Fund, prioritizing UK semiconductors in public contracts, and skills plans.
23 December 2024
Semiconductor laser market growing at 9% CAGR to over $5bn in 2029
The telecom & infrastructure segment is growing at 18% to over $2.5bn, as consumer applications grow just 1% to $1.75bn, says Yole Développement.
