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Defect-free AlGaInP native red micro-LEDs by wet chemical etching

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Micro-LEDs maintain momentum despite Apple’s withdrawal

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Micro-LEDs on freestanding GaN

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DBR-free thin-film InGaN VCSELs

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Transfer-printed lasers on silicon photonics

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Planned 8-inch silicon carbide wafer fabs worldwide reach 14

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High-current vertical diamond MOSFETs

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Red/yellow InGaN micro-LED photodetectors for visual light communications

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Strain-engineering for green LEDs on silicon

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Zinc oxide homojunction LEDs

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TMAl reflow GaN-on-silicon for fully vertical electronics

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Magnesium intercalation in gallium nitride

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ETRI develops p-type selenium-tellurium alloy transistor

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Comparison between MBE and MOCVD technologies

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Near size-independent UV-A micro-LED performance

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Red InGaN micro-LED on silicon prospecting

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Etching-free pixel definition for InGaN micro-LEDs

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Gallium nitride HEMTs on 8-inch sapphire

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Fraunhofer IAF uses MOCVD to fabricate aluminum yttrium nitride

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PCSEL emits at more than 300mW CW at 1550nm wavelength

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InP-on-insulator substrates for 2.1μm lasers on silicon

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Reversing size effects in cyan–green micro-LEDs

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Sumitomo presents poreassisted free-standing GaN

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Poly-MoS2 FETs integrated on 200mm substrate

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Micro-LED IP plateaus after seven years of exponential growth

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III–nitride ultraviolet photonic circuits on silicon

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High-power 1.55μm CW laser diodes on silicon

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Reconstituted silicon wafers with III–V and silicon dies

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HEMTs with 3C-SiC on 4H-SiC interfaces

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Layer transfer of III–N MEMS via 2D hexagonal boron nitride

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Recycling GaN for vertical power device performance

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Cascading VCSELs to boost power efficiency

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Triple-lattice photonic crystal laser

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First true ternary near-IR III–V nanowire-lasers

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Green photonic-crystal surface-emitting lasers

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Probing InGaN RGB micro-LEDs on silicon

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UCSB reports first N-polar InAlGaN HEMT

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Carbon removal for boosting GaN electron mobility

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Fully vertical GaN-on-SiC Schottkys with low on-resistance

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Silicon carbide substrate costs falling as larger diameters adopted

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Compound semiconductor substrate market growing at 17% CAGR to $3.3bn in 2029

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Red InGaN micro-LEDs on freestanding substrates

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V-defects for improved red InGaN LED performance

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Virtual body concept for 650V GaN-on-silicon ICs

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Dynamic performance of vertical GaN JFETs

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Lateral polarity structure GaN Schottky barrier diodes

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Nickel nanoparticle lift to p-GaN-free deep-UV LEDs

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Stacking p-down green LEDs using tunnel junctions

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Full-color active-matrix micro-LED micro-displays

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Laser-assisted separation for freestanding GaN

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Record frequency AlGaN-channel transistors

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More players exhibiting a common IP strategy for power & RF GaN technologies

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Fully in-situ roughening for ultrathin III–V solar cells

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First droplet epitaxy of InAs quantum dots on InGaAsP quaternary alloy

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Determining droop in green InGaN LEDs

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Extracting efficiency contributions for sub-10μm LEDs

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Status of the IP competition for vertical gallium nitride power devices

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RF sputtering of gallium oxide on diamond

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Germanium–tin MQW LEDs on 12-inch silicon substrate

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Fabricating 330ppi monolithic GaInN RGB pixels

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GaN:AlN superlattice UVC LEDs boost light extraction

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Next Level Epitaxy for aluminium nitride thin films

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Recessing metal contacts for gallium nitride transistors

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Auger recombination’s impact on InGaN LED efficiency

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Spalling-induced GaN lift-off and transfer

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MOCVD mid-to-long wavelength IR quantum cascade lasers on Si

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Silicon-based InAs QD laser operation above 150°C

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Balancing charge to boost Ga2O3 breakdown beyond 10kV

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Gallium oxide flash memory

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Improving micron-scale AlGaInP red LED performance

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Monolithic integration of III-V lasers & silicon photonics

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Co-doping boost for quantum dot lasers on Si(001)

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GeSn VCSE p-i-n diodes bonded on 200mm silicon

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AlScN ferroelectric FETs for monolithic 3D NVM integration

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NTT achieves 300GHz-band high-speed data transmission with beamforming

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All-MOCVD 980nm laser on (001) silicon

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InAs quantum dot lasers buttcoupled to SOI waveguides

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InAs quantum dot lasers on silicon carbide substrate

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Record sub-micron LED red emission efficiency

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Emerging substrates market growing at 27% CAGR to over $264m by 2028

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Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules

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CEA-Leti proof of concept demonstrates higher electron mobility in GeSn than in silicon or germanium

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Annealing InP quantum dot MBE structures for laser

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Re-assessing assumptions on internal quantum efficiency

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Red InGaN LEDs for visible light communications

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Thick single quantum well InGaN LEDs with high external quantum efficiency and low droop

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QPT’s modules enable GaN to operate at up to 20MHz without overheating or RF issues

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Infineon launches European Union projects for power electronics and artificial intelligence

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Progress towards complementary GaN on silicon

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Indium arsenide quantum dot lasers on silicon with simple GaAs buffer

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First transverse DUV-LEDs without n-AlGaN layers

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MOVPE core–shell AlGaN nanorods for UV emission

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Green exciton emission from nanowire micro-LEDs

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GaN on silicon through surface-activated bonding

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Commercialization of 800V for EVs to play crucial role in growth strategy of OEMs

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CSA Catapult celebrates fifth anniversary

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