22 September 2025
1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.
22 September 2025
E-mode GaN HEMT breakdown beyond 10kV
An optimized RESURF structure enables an improved breakdown voltage–on-resistance trade-off.
22 September 2025
D-band GaN power HEMTs on silicon
Researchers report the highest-frequency device performance so far.
22 September 2025
Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors.
22 September 2025
Laser transfer of blue micro-LED arrays
Researchers in Shanghai have used rubber tape as a device carrier before thermo-compression bonding of the flipped chip array to the target substrate.
22 September 2025
University of Glasgow reports single-chip laser system with 983Hz linewidth
A topological interface state extended laser with optical injection locking has been integrated on an indium phosphide substrate.
1 September 2025
N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.
1 September 2025
Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.