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28 June 2024

SMC opens second power MOSFET and diode fab in Nanjing

Capacity quadrupled, incuding end-to-end production of SiC products for the first time

27 June 2024
Near size-independent UV-A micro-LED performance
Researchers claim record for on-wafer EQE from sub-10µm device.
27 June 2024

Nexperia investing $200m in Hamburg site to add wide-bandgap semiconductors

R&D and production of GaN and SiC to be added to expansion of silicon production to 200mm wafers

27 June 2024

ROHM develops VCSELED infrared light source combining features of VCSELs and LEDs

Low temperature dependence plus wide-angle emission and uniform output aid ADAS

27 June 2024

NASA awards $750,000 EPSCoR grant for project using UV light for space communications

III–nitride wide- and ultra-wide-bandgap materials target high-data-rate communications with satellites and deep-space probes

26 June 2024

EC and Italian government awards IPCEI ME/CT funding to GlobalWafers/MEMC to establish 300mm wafer production

€103m supports EC’s aim to endorse research, innovation and industrial deployment of microelectronics and communication technologies across EU value chain

26 June 2024

SK keyfoundry intensifying efforts to develop GaN for power electronics

Development of 650V GaN HEMTs by end-2024, prior to portfolio spanning GaN and SiC power semis

25 June 2024

Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization

June quarter to see under-utilization impact from equipment incident at Durham 150mm fab

24 June 2024

NUBURU to implement 1-for-40 reverse stock split on 1 July

Firm trading on over-the-counter market while it targets return to NYSE American

21 June 2024

TI and Delta collaborating on EV on-board charging

Joint innovation lab to enable Delta to leverage TI’s digital control and GaN technology to enhance power density and performance of EV power systems

21 June 2024

BAE and GlobalFoundries collaborate on supply of essential semiconductors for US national security programs

Focus on US chip manufacturing and joint R&D for advanced chip technologies including GaN-on-Si

21 June 2024

Infineon launches CoolGaN 700V G4 power transistor product family

13 devices with RDS(on) spanning 20–315mΩ in various packages enable power systems from 20W to 25,000W

Bruker
AFC Industries
Vistec
Pfeiffer Vacuum
ETA Research
News Features
20 June 2024
GaN HEMTs on 8-inch sapphire
Researchers seek to reduce production costs for devices with blocking voltages beyond 1200V.
13 June 2024
Etching-free pixel definition for InGaN micro-LEDs
Selective thermal oxidation proposed as viable alternative to plasma etch.
6 June 2024
InP-on-insulator substrates for 2.1μm lasers on silicon
Ion-slicing technique could enable lower-cost production of optoelectronics.
22 May 2024
Reversing size effects in cyan-green micro-LEDs
Researchers fabricate QD LEDs with M-plane sidewalls with much reduced surface damage
17 May 2024
Sumitomo presents pore-assisted free-standing GaN
Researchers hope technique will enable larger substrates beyond 100mm.
9 May 2024
Poly- MoS2 FETs integrated on 200mm substrate
Researchers report performance comparable to single-crystal devices.
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Feature Downloads
31 May 2024

HEMTs with 3C-SiC on 4H-SiC interfaces
Researchers claim fabrication of the first device on a little-studied structure.

31 May 2024

Reconstituted silicon wafers with III–V and silicon dies
A fab-compatible process enables the co-integration of III-V materials and silicon with no detectable impact on performance.

31 May 2024

High-power 1.55μm CW laser diodes on silicon
Ion-cutting of a thin InP buffer layer onto a silicon substrate for III-V epitaxy.

31 May 2024

III–nitride ultraviolet photonic circuits on silicon
Researchers demonstrate system comprising monitor, LED, modulator, and photodetector.

31 May 2024

Micro-LED IP plateaus after seven years of exponential growth
Over $12bn has been spent by the micro-LED industry, including $3bn by Apple before its exit, says Yole Développement.

30 April 2024

Recycling GaN for vertical power device performance
Researchers see potential cost savings for key electric vehicle markets.

30 April 2024

Layer transfer of III–N MEMS via 2D hexagonal boron nitride
Researchers fabricate free-standing structures on silicon micro-cavities.

30 April 2024

Cascading VCSELs to boost power efficiency
Room-temperature performance comparable with edge-emitting devices.

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