For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month.

27 February 2025

Crack-free low threading dislocation density AlGaN for sub-365nm UV

Lowest defect density claimed for Al0.2Ga0.8N grown on unpatterned sapphire.

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20 February 2025

AlScN-barrier GaN HEMT with record high on-current

Epitaxial high-k insulator enhancement enables 4A/mm density.

13 February 2025

Gallium oxide JFETs reach beyond 10kV breakdown

Researchers claim the first report of 250°C operation and 3kV reliability data

6 February 2025

InGaN laser diodes on c-plane lateral overgrowth material

Researchers demonstrate improved performance on high-quality crystal regions covering up to 88% of wafer.

30 January 2025

GaN complementary logic circuit building blocks

Researchers claim breakthroughs for propagation delay and p-FET drain currents.

23 January 2025

Gallium arsenide nano-ridge laser diodes on 300mm silicon

Researchers achieve record-low 6x104/cm2 misfit defect density.

16 January 2025

Improving hole injection in deep UV LEDs

Researchers report 20% enhanced light output power and 6% voltage reduction at 40mA.

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3 March 2025

Fast gallium oxide MOCVD growth
Researchers achieve high mobility comparable to material grown at slower rates.

3 March 2025

Record-performance N-polar GaN Schottky barrier gate HEMTs on low-cost sapphire
University of California, Santa Barbara reports record large-signal gain and record power-added efficiency at W-band frequencies.

3 March 2025

Fully vertical GaN p-i-n diodes on silicon
Soft breakdown reaches 1200V with 0.48mΩ-cm2 on-resistance.

3 March 2025

Improving hole injection in deep UV LEDs
Researchers report 20% enhanced light output power and 6% voltage reduction at 40mA.

3 March 2025

Red InGaN LEDs on scandium aluminium magnesium
An alternative substrate could enable future development of full-color displays.

3 March 2025

Near-room temperature 8μm interband cascade lasers
Researchers believe that room temperature operation is within reach.

3 February 2025

Indium phosphide laser on silicon nitride photonic circuit
Micro-transfer printing integration achieves wavelength tuning over 54nm in the C and L bands.

3 February 2025

CSA Catapult outlines steps to create UK semiconductor ‘super cluster’ and drive long term growth and exports
Recommendations include a National Semiconductor Institute, a Semiconductor Challenge Fund, prioritizing UK semiconductors in public contracts, and skills plans.

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