FREE subscription
Subscribe for free to receive each issue of Semiconductor Today magazine and weekly news brief.


9 December 2008


Microsemi delivers 4G wireless PA with 23% power-conversion efficiency

Microsemi Corp of Irvine, CA, USA, which designs and manufactures analog and mixed-signal ICs and high-reliability semiconductors, has announced production of its LX5537 power amplifier (PA) for IEEE 802.16e WiMAX and WiBro 4G wireless applications using the 2.3-2.9GHz frequency range.

Operating from a single-polarity 3.0-4.2V supply, the LX5537 delivers what is claimed to be best-in-class power-conversion efficiency of 23%, power gain of 31dB or higher, and output power of 25dBm for 3% EVM (3.3V), extending the firm’s RF wireless LAN portfolio into next-generation wireless network applications.

“With engagements at the leading 4G original equipment manufacturers, our new LX5537 WiMax power amplifier solves the common problems encountered in mobile and customer premises equipment (CPE) WiMAX designs, including challenging performance requirements, solution cost and PCB area,” claims Kang Hee Kim, RF product line manager at Microsemi’s Analog Mixed Signal Group. The new 802.16e PA joins the firm’s line of 802.11a/b/g and 802.11n power amplifiers in its RF portfolio. Microsemi recently surpassed 75 million shipments in 802.11 a/b/g and the latest 802.11n networks.

Offered in a small 3mm x 3mm x 0.9mm 16L QFN package, the LX5537 features a temperature-compensated on-chip output power detector with a wide dynamic range to implement power control with minimum BOM cost and PCB area. The 26dB attenuation function can optionally be used to reach low gain mode.

Pricing of the LX5537 in 10,000-unit quantities is $2.85.

See related items:

Microsemi launches record-power SiC RF transistors for VHF and UHF radar

Microsemi’s WLAN RF power amplifier shipments surpass 75m units

Search: Microsemi Corp IEEE 802.16e WiMAX WiBro 4G wireless