News

26 November 2008

 

nLight introduces new generation of 1400 nm to 2000 nm InP-based laser diodes for medical applications

High-power semiconductor diode laser manufacturer nLight Corp of Vancouver, WA, USA has introduced a new generation of 1400 nm to 2000 nm semiconductor laser diodes based on indium phosphide (InP). According to the firm, the wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers.  

At 1.9 microns, the Pearl fiber-coupled module provides up to 20 watts output power from a single 400 micron 0.22NA fiber with >10% wall-plug efficiency. Single emitter chips produce up to 1.5 watts rated power on expansion matched substrates.

At 1.4 and 1.5 microns, the module provides up to 40 watts from a single 400 micron 0.22NA fiber and >30% wall-plug efficiency. Single emitter chips produce up to 3.5 watts rated power on expansion matched substrates. 

“For more than five years nLight has supported advanced research to develop applications using InP semiconductor laser diodes,” said Joe DeBartolo, nLight VP Sales and Marketing. “With our experience and over 13,000 actual hours on lifetest under accelerated current and temperature conditions, we are excited to help bring new solutions to medical applications.”

See related items:

nLight buys stake in Optotools

nLight acquires fiber maker Liekki

nLight acquires Flextronics Photonics for high-volume integration

Search: Semiconductor diode laser InP

Visit: www.nLIGHT.net