News

27 October 2008

 

TriQuint introduces two high volume GaAs foundry processes for mmWave market

TriQuint Semiconductor Inc of Hillsboro, OR, USA has introduced two 150mm high volume GaAs processes (TQP25 and TQP15) for millimeter wave (mmWave) applications. According to the firm, the new pHEMT processes utilize optical lithography technology to reduce cost compared to traditional E-beam based solutions, and expand TriQuint’s commercial foundry pHEMT offerings to cover the entire range of mmW frequencies. 

“The cost efficiencies enabled by utilizing optical lithography in place of more traditional E-beam offers a broader range of customers the ability to develop millimeter wave applications.  This disruptive price point will help bring mmWave applications into the commercial market space,” says Mike Peters, director of marketing for Commercial Foundry at TriQuint.

TQP25 enables the design of high throw count switches, such as those used in the 3G WCDMA mobile handset market.  High throw count switches enable access to multiple frequency bands from a single antenna, reducing the overall RF front-end footprint.  TQP25 is also ideal for Ku-band PA designs and as an enhancement/depletion (E/D) process, it allows levels of integration not typically available in this frequency range, says the firm.  TQP25 is currently available on limited release.

TQP15 targets the Ka-band segment and is ideal for the VSAT, satellite communications, and point-to-point radio markets.  TQP15 will be on limited release at the end of Q4/2008.

“TriQuint is the industry’s leading gallium arsenide foundry services provider and continues to expand its process portfolio,” says Asif Anwar, program director of the GaAs Service at Strategy Analytics. “TriQuint’s new 0.15um and 0.25um processes will help the VSAT industry address future trends that include implementation of Ka band-based broadband services, which we see as a growth area, as well as target other commercial millimeter-wave markets with cost effective solutions.”

Process specifications

Parameter	TQP15	TQP25
T-Gate	0.15um D	0.25um D	0.35um E
Bv (min)	12	10	10
Bv (typ)	14	12	12
Vp (v)	-1	-0.9	0.3
Idss (mA/mm	310	250	100
Imax (mA/mm)	550	550	375
Ft	85-100 (peak)	45 @ Idss	45 @ 50% Imax
Fmax	Tbd	125 @ Idss	110 @ 50% Imax
Gm	400	450 @ Idss	650 @ 50% Imax
Passives	50ohm NiCr Resistor, 620 pFmm2 MIM Cap
Interconnect	1 Local, 1 Global with BCB dielectric

See related items:

WJ boosts TriQuint’s 47% growth as profit triples

TriQuint claims smallest, most integrated GPS RF front-end module

TriQuint’s GaAs foundry process used for ICs in Large Hadron Collider

TriQuint wins $4.5m Navy contract to extend GaAs pHEMTs above 20GHz

Search: TriQuint GaAs pHEMTs

Visit: www.triquint.com