News

3 December 2009

 

AWR offers RF small-signal design kit for NXP’s SiGe:C BiCMOS

High-frequency electronic design automation (EDA) software tool provider AWR of El Segundo, CA, USA and NXP Semiconductor of Eindhoven, The Netherlands have made available a small-signal RF design kit for NXP’s SiGe:C silicon-germanium bipolar junction complementary metal oxide semiconductor (BiCMOS) process. The design kit installs within AWR’s Microwave Office software and functions as an integrated part of the simulation environment.

Microwave Office Design Kit Version v1.0 provides models for RF components such as wideband devices, diodes, junction FETs, dual-gate MOSFETs, and MMICs, and includes SPICE parameters, S parameters, noise parameters, and data sheets.

NXP’s BiCMOS process aims to speed the migration from gallium arsenide to silicon components with low-noise performance and IP availability. The process is optimized to allow users to incorporate more functionality into devices at competitive costs and in less space. NXP says that it delivers high levels of integration and performance at high frequencies that can enhance next-generation RF products such as low-noise amplifiers, medium-power amplifiers, and local oscillators used in wireless user equipment and infrastructure.

Search: AWR EDA NXP Semiconductor SiGe:C BiCMOS

Visit: www.nxp.com/models/index.html

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