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2 December 2009


Nitronex and Modelithics collaborate on non-linear GaN device models

Nitronex Corp of Durham, NC, USA, which manufactures gallium nitride on silicon (GaN-on-Si) RF power transistors for the commercial wireless infrastructure, broadband and military markets, and Modelithics Inc of Tampa, FL, USA, which provides RF and microwave simulation models for use in electronic design automation (EDA), have announced a collaboration to create non-linear models for Nitronex’s high-power GaN devices.

Nitronex reckons that combining its GaN power devices with the Modelithics team’s 35+ years of modeling experience will allow power amplifier designers to achieve better performance with faster time to market. Initial models will focus on Nitronex's new thermally improved products targeting broadband and high-efficiency amplifiers for the military communications, electronic warfare, and radar markets.

“We are very pleased to add Nitronex as a strategic Modelithics vendor partner and look forward to a productive working relationship benefitting designers of efficient, higher-power, and broader-band GaN PA designs,” says Modelithics’ president & CEO Larry Dunleavy.

The models will be available as a free download for Agilent Technologies Advanced Design System (ADS) and AWR Microwave Office (MWO) software and will also be included in Modelithics Select free shareware library, available for ADS and MWO. Visit the Modelithics website for details.

See related item:

Wafer bonding creates opportunities for Si/GaN integration

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