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16 February 2009

 

SemiSouth launches new line of SiC Schottky diodes

SemiSouth Laboratories Inc of Austin, TX, USA has launched a complete line of silicon carbide (SiC) Schottky diodes to fill what it claims is a ‘critical void’ in the market for high performance power semiconductors. Rated at 1200V, initial devices will be available at 5A, 10A, 20A, and 30A. The 30A diode will be the largest SiC Schottky diode ever commercialized, says the firm.

"As we have visited customers around the world, we continue to see strong acceptance of our high performance and high efficiency devices. Customers also realize that upgrading to SemiSouth's silicon carbide Schottky diodes is not only the fastest way to improve efficiency and performance, but the lowest cost as well," says SemiSouth’s CEO, Kenney Roberts.

Jeff Casady, SemiSouth's CTO, adds: "In addition to performance enhancement through a simple drop-in replacement, designers are now also experiencing the benefits of new power topologies and architectures that were not achievable without the high-speed and low-loss nature of silicon carbide. The 1200V Schottky diodes are avalanche capable and have zero-recovery loss. This now enables power supplies and solar inverters to have the highest possible levels of efficiency, reliability, and power density."

See related items:

SemiSouth receives SBIR contract to develop new class of high-speed JFETs

SemiSouth appoints VPs of sales and marketing

SemiSouth promotes Roberts from COO to CEO

Search: SemiSouth SiC Schottky diodes

Visit: www.semisouth.com

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