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6 July 2009


IQE launches germanium-on-insulator wafers for high-performance devices

As the latest addition to its portfolio of advanced wafer products, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has made available production-ready germanium-on-insulator (GeOI) engineered substrates for high-performance ICs and devices.

The firm says that engineers at its Cardiff-based silicon epitaxy facility have developed new manufacturing techniques to overcome long-standing challenges to produce GeOI material with extremely high crystalline quality.

The new engineered GeOI substrate will allow device designers to look beyond the performance constraints imposed by existing silicon technologies. “This addition of high-mobility GeOI material for next-generation processor, memory, MEMS (micro-electro-mechanical systems) and solar applications, shows our commitment to ensuring that our customers maintain their competitive advantage through rapid access to leading-edge technology,” says Ali Hoy, sales & business development manager for IQE’s electronics products.

GeOI development kits are available in 4” (100mm) and 6” (150mm) diameter wafer sizes. The new addition to IQE’s product range will be showcased at next week’s SEMICON West trade show in San Francisco, CA, USA (14-16 July). Later this year IQE will also make available 8” (200mm) GeOI wafers.

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