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30 July 2009


SI GaAs epi market set for growth in 2010

In 2008 the semi-insulating (SI) gallium arsenide (GaAs) epitaxial substrate market grew 22% year-on-year, but in 2009 the market will be flat-to-negative, says Strategy Analytics in its report ‘ Markets for SI GaAs Epitaxial Substrates: 2008-2013’. However, growth is forecast for 2010, driven by multiple GaAs device insertions in next-generation cellular handset platforms.

Suppliers have traditionally focused on providing HBT (Heterojunction Bipolar Transistor), HEMT (High Electron Mobility Transistor) and FET (Field Effect Transistor) epitaxial structures, but this is shifting to solutions that allow multiple structures to be combined on the one substrate in order to provide BiFET (Bipolar Field Effect Transistor) or BiHEMT (Bipolar High Electron Mobility Transistor) devices.

“We estimate that BiFET / BiHEMT structures accounted for 6% of the total SI GaAs epitaxial substrate market in 2008,” said Asif Anwar of Strategy Analytics. “While still small, this segment will show the fastest growth through 2013 as GaAs device manufacturers look to differentiate their products by offering integrated solutions.”

The report concludes that GaAs epitaxial substrate demand will grow at a CAAGR (compound annual average growth rate) of 5% over 2008 to 2013, with the corresponding market for GaAs MOCVD (Metal Organic Chemical Vapour Deposition) and MBE (Molecular Beam Epitaxy) substrates being worth $402m in 2013.

See related items:

SI GaAs substrate market to shrink just 1% in 2009

SI GaAs epi market to grow 7% in 2008 then 10% in 2009

SI GaAs epi market to grow at 8% through 2011

Search: SI GaAs epiwafers