News

10 June 2009

 

TriQuint extends IQE contract

Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that its gallium nitride (GaN) wafer products supply contract with semiconductor manufacturer TriQuint Semiconductor Inc of Hillsboro, OR, USA has been extended. IQE's New Jersey operation will continue to sub-contract to TriQuint, along with BAE Systems and Lockheed Martin.

The extension to IQE’s contract follows TriQuint's recent news that it has been awarded a US Army Research Laboratory (ARL) contract to lead Phase III of the R&D program Wide Bandgap Semiconductors for RF Applications (WBGS-RF). Funded by the US Defense Advanced Research Projects Agency (DARPA), the WBGS-RF program aims to develop new high-power, high-efficiency GaN-based wideband amplifiers for defense and aerospace applications. TriQuint will use IQE’s GaN based HEMT (high electron mobility transistor) wafers to support product development for these applications.

Cathy Lee, TriQuint’s Phase III program manager, said: “TriQuint is very excited to continue its leadership of a highly qualified team in the development of this technology. In Phase II, we developed a high performance, reliable gallium nitride process with excellent reproducibility and high yield. We have enjoyed a close working relationship with IQE throughout Phase II of this program and this latest order is based on their solid support of us throughout that relationship.”

Alex Ceruzzi, VP and general manager of IQE’s New Jersey facility, added: “The continued relationship between IQE and TriQuint is a key demonstration of IQE’s ability to provide world class materials across a broad RF product portfolio, including emerging technologies such as gallium nitride epitaxial wafers.”

See releted items:

ARL contracts TriQuint to lead $16.5m Phase III of WBGS DARPA program

IQE wins its largest commercial GaN epiwafer order

Search: IQE TriQuint GaN GaN HEMT

Visit: www.iqep.com

Visit: www.triquint.com

Visit: www.darpa.mil/MTO/programs/wbgsrf