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11 March 2009


Raytheon wins non-lethal weapons solid-state source contract

The US Department of Defense’s Joint Non-Lethal Weapons Directorate (JNLWD) has awarded Raytheon Company's Integrated Defense Systems (IDS) business of Tewksbury, MA, USA a phase-two contract by to develop a gallium nitride (GaN) solid-state source for use in non-lethal weapons.

Raytheon claims that its GaN technology enables revolutionary performance and functionality for a wide range of DoD systems including radar, electronic warfare and communications.

“Our support of the JNLWD is for very high-frequency, millimeter-wave GaN to provide the warfighter with a lower-cost, lighter-weight, non-lethal engagement alternative,” says Raytheon IDS’ VP of engineering Michael Del Checcolo.

Work on the contract will be conducted at IDS’ semiconductor foundry at the Integrated Air Defense Center in Andover, MA. IDS provides compound semiconductor technology development, products and services for military and homeland security applications. Foundry capabilities include design, development and manufacturing of gallium arsenide and GaN monolithic microwave integrated circuits (MMICs) and modules for advanced radar, electronic warfare, communications and weapon systems.

See related items:

Raytheon awarded $1m contract for active electronically scanned lens array

Raytheon demos GaN in radar components

Raytheon’s next-generation GaN MMICs complete 8,000 hours of operational testing

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