News

12 October 2009

 

Dow Corning opts for Aixtron AIX 2800G4 WW Planetary Reactor to expand SiC wafer production

Aixtron AG of Herzogenrath, Germany says that, in the second quarter of next year, materials giant Dow Corning aims to commission a new Aixtron AIX 2800G4 WW Planetary Reactor, for 10x100mm and future 6x150mm silicon carbide SiC wafer epitaxy.

“After a rigorous review, we selected the Aixtron system to enable us to deliver the morphology, defect density and uniformity required by our customers. The added capacity and capability up to 150mm will allow us to meet our customer's rapidly growing needs for high power SiC device production,” said Mark Loboda, science and technology manager, Dow Corning Compound Semiconductor Solutions.

Dr Frank Wischmeyer, vice president and managing director of Aixtron AB, Sweden added: “Building on over 10 years of experience with our SiC Hot-Wall Planetary Reactor technology, we are able to offer the proven next generation SiC AIX 2800G4 WW epitaxial production system. The enhanced productivity of the system is due to design features such as a central water cooled triple gas injector, improved process robustness and simplified maintenance procedures. Based on Aixtron’s proven IC design, the AIX 2800G4 WW system shares a common platform with over 300 installed systems worldwide. Aixtron is pleased to partner with Dow Corning Compound Semiconductor Solutions as they advance SiC devices into high volume low cost manufacturing.”

See related items:

SiC electronics needs transistor stimulus

Dow Corning ships low-defect 4-inch SiC substrates

See: Aixtron Company Profile

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Visit: www.dowcorning.com/compoundsemiconductor