6 April 2010


Skyworks launches dual-band WCDMA PA modules with integrated coupler

Skyworks Solutions Inc of Woburn, MA, USA, which makes linear products, power amplifiers, front-end modules and radio solutions for handset and infrastructure equipment, has introduced three 4mm x 5mm dual-band WCDMA power amplifier modules (PAMs) with an integrated directional coupler, eliminating the need for any external couplers.

Only two decoupling caps are needed outside the PA, making it a very clean and easy design/layout, says the firm. Additional benefits include the same pin-out for all three devices, allowing single-phone-board support of multiple frequency combinations, and an internal daisy chain coupler with a single CPL out port.

The single gallium arsenide monolithic microwave integrated circuit (MMIC) contains all active circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and inter-stage matching circuits. Output match into a 50-ohm load is realized off-chip within the module package to optimize efficiency and power performance.

The fully matched, 14-pad, surface-mount PAMs suit all wideband code division multiple access (WCDMA) handset and datacard applications and enable a variety of compatible baseband/RF architectures. The modules also meet the stringent spectral linearity requirements of high-speed downlink packet access (HSDPA) data transmission with high power-added efficiency.

The SKY77195 has full WCDMA Band I (1920–1980MHz) and Band VIII (880–915MHz) coverage, with high power-added efficiency for power output to 27.5dBm (Band I) and 28dBm (Band VIII).

The SKY77196 has full WCDMA Band II (1850–1910MHz) and Band V (824–849MHz) coverage, with high power-added efficiency for power output to 28.5dBm (Band II) and 28dBm (Band V).

The SKY77197 has full WCDMA Band I (1920–1980MHz) and Band V (824–849MHz) coverage. The SKY77197 meets the stringent spectral linearity requirements of WCDMA transmission, with high power added efficiency for power output to 28.25dBm (Band I and Band V).

The PAMs are manufactured using Skyworks’ InGaP GaAs heterojunction bipolar transistor (HBT) BiFET process, which provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. No VREF voltage is required. Power down is accomplished by setting the voltage on VENABLE to zero volts. No external supply-side switch is needed, as typical ‘off’ leakage is a few microamperes with full primary voltage supplied from the battery.

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