31 December 2010

M/A-COM Tech launches 250–3000MHz highly linear RF driver amplifier

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched the MAAM-009563, a two-stage heterojunction bipolar transistor (HBT) driver amplifier for cellular and WiMAX infrastructure applications.

The driver amplifier covers a broad frequency range of 250–3000MHz with excellent linearity of 47dBm output IP3 and typical gain of 19.5dB. The broad operation is achieved using external matching components, where component values are selected to center the 200MHz instantaneous bandwidth within the overall frequency range. The lead-free SOIC-8EP surface-mount plastic package is RoHS compliant and compatible with solder reflow temperatures up to 260oC. The ESD susceptibility achieves a class 2 ESD rating

“This highly efficient amplifier delivers high linearity and gain, and lower power consumption to cover a broad frequency range for infrastructure applications,” says product manager Jack Redus. “In addition to the MAAM-009563 amplifier, M/A-COM Tech offers a family of RF driver amplifiers covering similar frequency ranges at different power levels to meet a variety of requirements.”

Engineering samples, sample boards and production devices are available from stock.

Tags: M/A-COM Technology HBT RF driver amplifier

Visit: www.macomtech.com

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