13 January 2010


TELEFUNKEN’s SiGe power HBT run rate reaches 100 million per year

TELEFUNKEN Semiconductors of Heilbronn, Germany, which offers analog & mixed-signal foundry services for RF, power management, and high-voltage high-temperature automotive applications, says that it has achieved a run rate of more than 100 million units per year in supplying silicon germanium (SiGe) power ICs using heterojunction bipolar transistor (HBT) technology. The firms claims that this validates the features of its low-cost SiGe power HBT technology compared to higher-cost III-V-based (GaAs, InP, GaN) high-electron-mobility transistor (HEMT) technology as well as market acceptance and market share gains of the technology.

TELEFUNKEN has been using the SiGe HBT process in manufacturing since 1998. In particular, its Foundry Group offers production with design rules from 0.8µm to 0.35µm on 6 inch wafers (8 inch should be available by third-quarter 2010).

With SiGe process design kits (PDKs), foundry customers can design integrated circuits with analog frequencies up to 80GHz as well as sufficient power capability, the firm says. TELEFUNKEN Semiconductors offers models using HICUM (HIgh-CUrrent Model) for HBTs with Monte Carlo simulations based on production statistics. The firm says that its cost-efficient SiGe power technology is suited to applications in telecoms and high-speed data transfer such as DECT, CDMA, 5.8GHz WLAN and power amplifiers (WCDMA, 802.11, Bluetooth range extension, etc).

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