News

1 July 2010

 

Sanan ramps GaN HB-LED epiwafer production with order for multiple Aixtron CRIUS MOCVD tools

Aixtron AG of Aachen-Herzogenrath, Germany says that Sanan Optoelectronics Co Ltd of Xiamen, China placed an order at the end of 2009 for multiple CRIUS MOCVD tools (31x2 inch wafer). Aixtron’s local support team commissioned the reactors, which will be used for GaN HB-LED production, at Sanan’s new facility in Tianjin in the first two quarters of 2010.

Simon Lin, CEO of Sanan Optoelectronics, said: “We have begun a major expansion with our new facility in Tianjin and were looking for world-class MOCVD tools in order to increase our manufacturing capacity of high brightness light emitting diodes (HBLEDs). The reputation for excellent uniformity and high throughput from the Aixtron CRIUS MOCVD tool convinced us that these were the ideal choice for Sanan. Working closely with Aixtron’s support team we will be able to quickly ramp up HB GaN LED epiwafer production in response to the strong market demand.”

Sanan Optoelectronics Co Ltd is engaged in the design, development, manufacture and distribution of full color ultra high brightness (UHB) LEDs, epitaxial wafers, photo-diode detectors and compound solar cells.

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