22 July 2010


Mitsubishi develops GaN HEMTs for L- to C-band amplifiers

Tokyo-based Mitsubishi Electric Corp has developed three models of gallium nitride (GaN) high-electron-mobility transistor (HEMT) with power outputs of 10W, 20W and 40W for L-, S- and C-band (0.5–6GHz) amplifiers, which are incorporated into base-stations for mobile phones, very small aperture terminals (VSAT) and other transmission equipment. Sample shipments will begin in August.

With high-voltage operation of 47V (drain to source), the three models — with output power, linear power gain, and power-added efficiency (at P3dB, frequency = 2.6GHz), respectively — are as follows:

  • MGF0846G: 46dBm (40W), 12dB and 46%
  • MGF0843G: 43dBm (20W), 13dB and 48%
  • MGF0840G: 40dBm (10W), 12dB and 50%

For microwave transmitters, gallium arsenide power amplifiers are most commonly used, but gallium nitride is now garnering more attention, due to its high breakdown voltage and high saturated electron speed. Mitsubishi Electric claims that in March it became the first firm to manufacture GaN HEMTs for C-band space applications, launching four models. HEMTs that use GaN have higher power density, which helps to save energy and contributes to making transmitters more compact and lightweight, as well as extending operating lifetime.

The three new models have small-sized packages of 4.4mm × 14.0mm, which helps to reduce the mounting surface in amplifiers.

See related items:

Mitsubishi Electric claims first GaN HEMT amplifier exclusively for satellites

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