25 June 2010


NXP opens RF IC design center in US

Chip maker NXP Semiconductors of Eindhoven, The Netherlands has opened a high-performance radio frequency (RF) product creation center (PCC) in Billerica, near Boston, MA, USA.

The new facility will focus on the design of RF and microwave integrated circuits (ICs) used in demanding applications such as defense & aerospace, industrial, scientific and medical (ISM), satellite receivers and broadband communications. Leveraging NXP’s IP, product portfolio, processes and manufacturing capabilities, the design center is intended to further enhance NXP's position in these growing RF and microwave markets.

With its East Coast location, and close proximity to design teams in France and the Netherlands, the center is also intended to strengthen the technical and application support provided to NXP’s Americas-based customers.

“The deep pool of experienced and talented RF designers, the active RF customer base and the closeness to Europe make Boston the ideal location for the new NXP PCC,” says the Boston PCC general manager Ian Gresham. “The PCC team will endeavour to push the limits of our high-performance RF & Microwave products, overcoming market challenges through innovation.”

NXP’s RF portfolio spans high-power LDMOS for power amplifiers and SiGe:C BiCMOS for RF/IF MMICs, with CMOS for high-speed converters completing the RF front-end. As all these technologies are designed and manufactured in-house, they can be custom-tuned to application-specific requirements, says the firm.

“This new product creation center builds upon NXP’s 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications,” says John Croteau, senior VP & general manager of NXP’s High Performance RF and Lighting business lines. “Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A.”