31 March 2010


BC Systems’ GaN-based military RF power amplifier delivers 100W at 20–305MHz

BC Systems Inc of Setauket, NY, USA, which designs and manufactures switching and linear power supplies, power control products, and solid-state RF power amplifiers using device technologies including gallium nitride (GaN) RF power transistors, has introduced the Model RF40015, an RF power amplifier designed for defense applications in which broadband frequency coverage of 20–305MHz and RF output power of at least 100W in Class AB operation is desired in a compact, rugged package.

The RF40015 combines gallium nitride (GaN) RF power transistors with the firm’s design and fabrication techniques to deliver high RF power density in a module measuring only 5.5 x 4.5 x 1.6 inches and weighing less than 2 lb. It has extremely fast blanking speed of less than 5µs, giving what is claimed to be excellent noise performance and low standby power consumption, as well as efficiency of at least 30% and the ability to deliver its full RF power output into VSWR (voltage standing wave ratio) of 2.5:1.

The amplifier incorporates a custom DC-to-DC converter designed and manufactured by BC Systems that is highly efficient and allows the amplifier to operate from a 26–30 VDC power source. The unit is fully protected for over-current and over-voltage conditions, and has an operating temperature range of –20°C to +85°C (–45°C to +95°C non-operating). The device can be specified with an integrated low-power sampling port for RF output monitoring as well as a directional coupler.

BC Systems says that it can customize the DA Module to meet various military standards as well as for parameters such as operating frequency range, mounting configurations, and connector type.

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BC Systems introduces GaN-based RF power amplifier

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