10 May 2010


Tyndall to develop GaN capabilities with Aixtron CCS MOCVD tool

Deposition equipment maker Aixtron AG of Aachen-Herzogenrath, Germany says that in fourth-quarter 2009 Tyndall National Institute, based in University College Cork (UCC), Ireland, placed an order for a Close Coupled Showerhead MOCVD system, for delivery in first-half 2010 in 3x2-inch wafer configuration.

“From our existing Aixtron reactors we are very familiar with the quality of performance and engineering available with their tools,” says professor Peter Parbrook, who has been appointed to lead the GaN growth activity at Tyndall National Institute using strategic funding from Science Foundation Ireland. Reasons for choosing CCS reactor for the GaN program include the flexible reactor configuration, which includes gap adjustment, he adds. “Plus we can work with a range of different substrate sizes to suit our various research projects. Inherently, the tool also has high growth uniformity and we are looking forward to using the ARGUS pyrometric system to give us precision in-situ monitoring and process control,” Parbrook says. The growth tool will complement Tyndall’s existing expertise in the theory of GaN photonic materials and fabrication of GaN-based devices.

Following installation by the local Aixtron support team, the new system will be used to support work on GaN technologies, including the growth of GaN/(Al, Ga, In)N-based materials for optoelectronic and microelectronic devices with a focus on high-temperature growth of AlGaN structures.

See: Aixtron Company Profile

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