28 May 2010


GCS showcases THz Schottky diode foundry process

At this week’s IEEE MTT-S International Microwave Symposium (IMS 2010) in Anaheim, CA (24-28 May), pure-play gallium arsenide (GaAs) and indium phosphide (InP) foundry Global Communication Semiconductors Inc of Torrance, CA, USA showcased its new THz diode foundry process (which was first made available in mid-May).

The planar Schottky diode process has a cutoff frequency of more than 1THz with an ideality factor of 1.1. The low diode turn-on voltage (<500mV) allows mixer operation with a LO power below 10dBm and a conversion loss of 6.5dB at W-band.

Unlike other THz diodes, GCS’ process can be integrated with other passive components, such as MIM caps, spiral inductors, thin-film resistors and transmission lines to realize diplexers and filters monolithically. The monolithic integration eliminates unwanted parasitic elements from wire bond, which is highly undesirable at millimeter-W frequencies, the firm adds.

For microwave frequency transceiver components, the THz diode suits low conversion loss mixers, with options to be monolithically integrated with heterojunction bipolar transistor (HBT) circuits (LO and linear PA) and high-electron mobility transistor (HEMT) circuits (LNA, switch, and PA).

At IMS 2010, GCS showcased its new THz diode foundry process along with its complete HBT and PHEMT process portfolio.

See related item:

GCS announces THz diode foundry process for mm-wave transceivers

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