5 May 2010


Infineon adds to SiC Schottky diode portfolio

Infineon Technologies AG of Neubiberg, Germany has launched its second generation silicon carbide (SiC) Schottky diodes in the TO-220 FullPAK package.

Infineon says that the new TO220 FullPak portfolio combines the high electrical performance of the second generation ThinQ! SiC Schottky diodes with the advantages of a fully isolated package, including easier and more reliable mounting, without having to use isolating bushing and foil.

Furthermore, the TO220 FullPAK devices show a similar junction-to-heatsink thermal resistance as the standard non-isolated TO-220 devices. According to Infineon, this is accomplished by using the firm’s patented diffusion soldering technique, which strongly reduces the “chip-to-leadframe” thermal resistance and effectively compensates for the FullPAK’s internal isolation layer. Infineon offers the 600V FullPAK portfolio in current ratings from 2A to 6A.

SiC is a revolutionary material for power semiconductors, with physical properties that far outperform Si power devices, says the firm. Key features are a benchmark switching behavior, no reverse recovery, virtually no temperature influence on the switching behavior and a standard operating temperature of -55°C to 175°C.

The main application areas for SiC Schottky diodes are active Power Factor Correction (PFC) in Switched Mode Power Supplies (SMPS) and other AC/DC and DC/DC power conversion applications such as solar inverters and motor drives. The FullPAK portfolio is suited for power supply application in flat panel displays (LCD/PDP) and computers.

Infineon’s SiC Schottky diodes are offered in 600V and 1200V. The full portfolio is now released for production.

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