25 May 2010


Nitronex releases GaN MMIC process design kit for Agilent’s Advanced Design System

Nitronex of Durham, NC, USA, which makes gallium nitride on silicon (GaN-on-Si) RF power transistors for the defense, communications, and industrial & scientific markets, has released the NRF1 MMIC process design kit (PDK) for Agilent’s Advanced Design System (ADS). Nitronex’s 0.5 micron GaN HEMT technology, together with the PDK, provides the active and passive elements needed to enable the development of monolithic power amplifiers operating up to 6GHz.

“We developed the PDK in collaboration with our strategic foundry partners who require high-performance broadband solutions through 6GHz,” says VP of engineering Ray Crampton. “The functionality and accuracy offered by the multiple types of scalable active and passive elements included in the process design kit are enabling our strategic foundry partners, as well as Nitronex engineers, to realize the full potential of MMIC products with our NRF1 technology,” he adds.

For active elements, the PDK offers fixed and geometrically scalable GaN HEMTs, as well as scalable multi-finger Schottky diodes. For passive elements, epi and TFR resistors, circular and square inductors, as well as circular and rectangular MIM capacitors are available. The PDK also offers a full transmission line library including backside vias.

Search: Nitronex MMIC PDK Agilent GaN HEMT