13 May 2010


NXP to offer 50 SiGe:C BiCMOS-based RF/microwave products

Targeting high-frequency radio applications, NXP Semiconductors of Eindhoven, The Netherlands has announced the launch of a series of new products developed in its latest SiGe (silicon-germanium) process technology.

Addressing growing demand for more robust, cost-effective and highly integrated silicon-based technology, NXP will offer a total of more than 50 products based on SiGe:C by the end of 2010. Delivering high power gain and dynamic range, NXP’s QUBiC4 SiGe:C process is designed to meet the needs of real-life, high-frequency applications in the wireless, broadband communications, networking, and multimedia markets. NXP will demonstrate its high-performance RF solutions at the 2010 IEEE MTT-S International Microwave Symposium (IMS) in Anaheim, CA, USA (25-27 May).

With more than a dozen SiGe-based products in the market, NXP has developed and shipped more than 25 million RF products using its QUBiC4 technology, demonstrating the maturity of the process as well as industry acknowledgement of how SiGe:C can deliver the performance of GaAs technology, the firm claims.

“NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave markets,” says Ronald van Cleef, NXP’s general manager, RF small-signal business. “We endeavor to provide cost-effective, integrated, high-frequency solutions with the performance of GaAs technologies using a silicon-based process,” he adds.

NXP says that its SiGe:C QUBiC4 process allows wireless equipment makers to add more functionality onto devices with less space, competitive cost, reliability and manufacturing advantage. The firm adds that QUBiC4 speeds migration from GaAs to silicon by enabling low-noise performance and IP availability.

NXP offers three variants of QUBiC4: QUBiC4+, a silicon-based process for applications up to 5GHz such as medium-power amplifiers; QUBiC4X, a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very-low-noise applications such as GPS; and the most recent 0.25µm QUBiC4Xi SiGe:C process, offering an Ft in excess of 200GHz, which is particularly suited to applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.

NXP says that, with proven IP and in-house fabrication for volume production, its QUBiC4 SiGe:C technology has been designed to improve overall RF performance and make the components less expensive, while offering higher and more flexible performance than GaAs counterparts. Backed by more than 45 years of experience in RF modeling, design and packaging, NXP says that its QUBiC4 combines the performance of GaAs technologies with the reliability of a silicon-based process. With the continued growth of high-speed-digital data transmission and wireless communications technology, the firm adds that QUBiC4 is advancing solutions traditionally offered only by GaAs technologies at a lower cost, with higher integration and added features, as well as addressing the need for low power consumption.

Applications for QUBiC4-based products range from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDR), base-stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential. End users can benefit from increased functionality on smaller and lighter-weight mobile phones.

More than 50 products based on the SiGe:C process will be available by the end of 2010. A dozen products are already available, including GPS low-noise amplifiers such as the BGU7005, medium power amplifiers such as the BGA7124 and LO generators such as the TFF1003HN. Another 40 new products will be released in May and throughout the year, including new 6 th- and 7 th-generation wideband transistors, low-noise amplifiers, medium power amplifiers, variable gain amplifiers and LO generators.

Search: NXP Semiconductors SiGe