19 May 2010


RFMD to showcase high-power GaN products at IEEE’s International Microwave Symposium

Designer and manufacturer of high-performance radio frequency components and compound semiconductors, RF Micro Devices (RFMD) Inc of Greensboro, NC, USA is to showcase its portfolio of RF communications components at the IEEE International Microwave Symposium (IMS), which takes place next week (May 25-27) in Anaheim, California.

During the event, RFMD will host in-booth demonstrations of its high-power gallium nitride (GaN) products and its smart energy/advanced metering infrastructure (AMI) Zigbee products.

RFMD's GaN in-booth demonstration will feature the RFG1M09180, a high power, high efficiency GaN Doherty amplifier for 3G/4G cellular base stations. The firm says that the RFG1M09180 achieves 180W peak power at 50V operation while maintaining over 70% peak efficiency, and a single RFG1M09180 amplifier can cover a frequency range of 700MHz to 1000MHz.

RFMD's smart energy/AMI demonstration will feature the firm’s Zigbee products developed in collaboration with Ember Corporation for the RF6525/EM357 reference design.

Representatives of RFMD’s Defense and Power, Broadband Components, Wireless Connectivity, Wireless Products, and GaN Foundry Services business units will be available on the firm’s booth (#810), as well as presenting papers, chairing sessions and hosting proceedings.

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