27 May 2010


RFMD launches fully tested WiMAX power amplifier

At this week’s IEEE MTT-S International Microwave Symposium (IMS 2010) in Anaheim, CA (25-27 May), RF Micro Devices Inc of Greensboro, NC, USA announced the availability of the RF5633 3.3-3.8GHz power amplifier IC.

The RF5633 is optimized for WiMAX systems, but it can be designed into multiple applications including customer premises equipment (CPE), gateways, access points, wireless infrastructure, and WiFi-based wireless high-definition interface (WHDI) for wireless video distribution networks.

The RF5633 integrates a three-stage PA and power detector in a 4mm x 4mm QFN package, minimizing design-in footprint requirements. The IC also works from a standard 5V supply, eliminating the need for additional power supplies and enhancing ease of use for product development. It is also fully DC and RF tested, including error vector magnitude (EVM) at the rated output power, maximizing application yields and accelerating time-to-market, RFMD says. Featuring InGaP heterojunction bipolar transistor (HBT) technology, the RF5633 is packaged in a leadless chip carrier with a backside ground.

EVM is 2.5% with an output power of 28dBm at 3.4-3.6GHz or 27dBm at 3.6-3.8GHz. The bias of the PA can be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The RF5633 offers high gain of 34dB and high linear output power, with what is claimed to be best-in-class efficiency. Linearity is maintained over a wide range of temperatures and power outputs, while the external match enables tuning for output power over multiple bands. The RF5633 also features internal input and inter-stage matching, a power-down mode, and power detection.