3 November 2010


Dow Electronic Materials breaks ground on Korean TMG plant

Dow Electronic Materials of Philadelphia, PA, USA, a business unit of The Dow Chemical Company, has broken ground on its new metalorganic chemical vapor deposition (MOCVD) precursor manufacturing plant in Cheonan, Korea, about 85km south of Seoul.

Construction of the new plant is part of a multi-phase plan announced in June to expand trimethyl gallium (TMG) production capacity to meet the surging global demand from LED and related electronics markets. The facility is expected to be operational in early 2011.

Dow Electronic Materials currently manufactures TMG and other metalorganic precursors in North Andover, MA, while packaging is performed in both North Andover and Taoyuan, Taiwan.

Capacity expansion in the USA at existing facilities is also progressing as planned, with new capacity expected by the end of 2010 and continuing through first-quarter 2011. Total additional capacity resulting from the multi-phase plan is expected to be 60 metric tons per year.

“Meeting our customers’ near- and long-term needs for high-quality materials continues to be a priority for us,” says Joe Reiser, global business director, Metalorganic Technologies. “The construction of our new facility in Korea illustrates our commitment to investing in expansion and having supply capabilities close to our customer base in Asia.”

See related items:

Albemarle building Korean TMG plant to meet growth in HB-LEDs

Chemtura expanding MO precursor capacity and forming Korean JV targeting HB-LEDs

Dow Electronic Materials to expand TMG capacity to serve LED market

LED market explosion hampered by materials shortage

AkzoNobel doubling TMG production capacity

SAFC Hitech expanding TMG capacity in UK plant

Search: Dow Electronic Materials MOCVD precursor TMG


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