18 November 2010

EPC’s eGaN products win EDN China’s Innovation Award

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its family of enhancement-mode gallium nitride on silicon (eGaN) power FETs have been awarded the ‘Editor’s Choice Award’ in the power device and module segment of the Electronic Design News (EDN) China’s 2010 Innovation Awards.

The panel of judges based the award on the online voting by Chinese design engineers. “It is the best-recognized product yet to be fully adopted in target markets,” says EDN China's publisher William Zhang. “We also recognize EPC’s potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap,” he adds. EPC claims that it was first to introduce enhancement-mode GaN-on-silicon FETs as power MOSFET replacements.

“This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology,” claims the firm’s co-founder & CEO Alex Lidow. “The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors,” he adds.

Spanning a range of 40–200V and 4–100 milli-ohms, eGaN FETs demonstrate performance advantages over state-of-the-art silicon-based power MOSFETs. EPC says that its technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that can benefit from the performance include DC–DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, servers, solar micro-inverters, power over Ethernet (PoE), LED drive circuits, telecom base-stations, and cell phones. Products based on eGaN technology are priced between $1.12 and $5.00 in 1000-unit quantities.

See related items:

EPC updates device models for E-mode GaN transistors

Tags: EPC GaN GaN FETs

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