11 November 2010


RFMD unveils 2.3–2.7GHz PA IC for WiFi, WiMAX, LTE wireless

RF Micro Devices Inc of Greensboro, NC, USA has unveiled the RF5632, a 2.3–2.7GHz power amplifier IC optimized specifically for WiMAX systems that can be designed into multiple applications including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high-definition interface (WHDI) for wireless video distribution networks.

Based on indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) technology and packaged in a leadless chip carrier with a backside ground, the RF5632 integrates a three-stage power amplifier (PA) and power detector into a 4mm x 4mm QFN package, minimizing customer design footprint requirements. Also, the device operates from a standard 5V supply, eliminating additional power supply requirements, enhancing design flexibility and lowering bill-of-material costs (BOM). The RF5632 is also fully DC and RF tested including EVM at the rated output power, maximizing application yields and accelerating time-to-market.

The RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3–2.4GHz, 2.4–2.5GHz and 2.5–2.7GHz frequency ranges. The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The RF5632 offers high gain of 34dB and high linear output power, with what is claimed to be best-in-class efficiency. The device maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. It also features internal input and inter-stage matching, a power-down mode and power detection.

Pricing for the RF5632 starts at $3.10 per 10,000 units. RFMD is showcasing its portfolio of RF components at this week’s electronica 2010 trade show in Munich, Germany (9–12 November).

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