1 November 2010


TriQuint launches 20W GaN PA with 30% PAE for Ku-band defense communications

At this week's annual Military Communications (MILCOM 2010) conference in San Jose, (31 October – 3 November), RF component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching a gallium nitride (GaN) power amplifier (PA) with high power and efficiency for defense and commercial communications.

Fabricated using TriQuint’s production-released GaN-on-SiC process, the TGA2572 delivers 20W for Ku-band (14–16GHz) systems. “Our new TGA2572 delivers high gain as well as excellent power-added efficiency,” claims TriQuint marketing manager Grant Wilcox. Typical PAE is 30% and small-signal gain is 24dBm.

Offered in die and packaged forms, samples will be available in early 2011.

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