12 October 2010


FOREPI purchases its first Aixtron G5 system

Deposition equipment maker Aixtron AG of Aachen-Herzogenrath, Germany says that in Q2/2010 Formosa Epitaxy Inc (FOREPI) of Lung-Tan, Taoyuan, Taiwan ordered a 56x2-inch wafer AIX G5 HT MOCVD reactor. The system will be used for the production of GaN-based ultra-high brightness LEDs. Shipment is scheduled for Q4/2010.

FOREPI president Dr Fen-Ren Chien says: “This is our company’s first AIX G5 HT system, allowing us to smoothly transfer our process recipes to a new reactor. Once this is proven we can look forward to the purchase of more systems for production.

The reason why the Aixtron system was chosen comes down to the all round excellent performance of our existing systems like the G4 and CRIUS. Hence we have a strong interest in acquiring Aixtron’s recently launched products – such as the G5 and the CRIUS II. Following successful recipe transfer, FOREPI will exercise all the advantages that we can get from the G5 system, having already demonstrated high quality GaN deposition at very high growth rates and high pressure above 600 mbar resulting in superior GaN/InGaN uniformities."

Special features of the G5 include a new high growth rate injector, a graphite ceiling, and the EqiSat, which enables identical surface temperatures on all satellites/wafers, says Aixtron.

See related items:

FOREPI raising capital to expand LED capacity

See: Aixtron Company Profile

Search: Aixtron MOCVD GaN Blue LEDs Forepi


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