4 October 2010


AWR releases PDK for Cree GaN HEMT MMIC foundry

High-frequency electronic design automation (EDA) software tool provider AWR of El Segundo, CA, USA has released a new process design kit (PDK) supporting the high-power gallium nitride (GaN) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process of Cree Inc of Durham, NC.

The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR’s Microwave Office software environment and enable the design of MMICs that offer more power bandwidth, higher efficiency, and a smaller footprint than can be achieved using conventional technologies such as gallium arsenide (GaAs).

The Cree GaN HEMT MMIC process features high power density (4–6W/mm) transistors, slot vias, and high reliability (up to 225ºC operating channel temperatures), as well as scalable transistors. In addition, the Cree/AWR PDK leverages AWR’s Intelligent Net (iNet) automated interconnect construction technology to automatically radius and fillet corners when connecting different parts together, ensuring design-rule-check (DRC)-compliant layouts and eliminating the need for manual editing. The PDK is also setup for ready electromagnetic (EM) extraction through AWR’s EXTRACT technology, which can save designers’ time by not having to manually edit schematics for EM results.

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