21 September 2010


Dow Corning to produce 100mm SiC epi, joining 100mm substrates and 76mm substrates & epi

Dow Corning Corp of Midland, MI, USA says that it will begin production of 100mm-diameter silicon carbide (SiC) epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing.

The new product expands Dow Corning's product line beyond its existing offerings of 76mm-diameter SiC wafers and epitaxy and 100mm SiC wafers. The firm says that providing a single source for substrates (wafers and epi) simplifies production, ordering, and troubleshooting.

Dow Corning supplies SiC and silicone materials that can be used in high-power applications such as high-tech communications, solar and wind energy systems, large-scale electrical distribution grids, vehicles, and academic research.

“We are committed to supporting the success of our customers by developing products that enhance performance while being cost effective,” says Dow Corning Compound Semiconductor Solutions’ commercial manager Fred Buether.

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