24 September 2010


IXYS subsidiary MwT adds family of GaAs and GaN based high linearity RF PAs to portfolio

IXYS Corp subsidiary MicroWave Technology Inc (MwT) of Fremont, CA, USA has introduced a family of three GaAs and GaN based high linearity RF power amplifiers (WPS-445133-02, WPS-444924-02, and MGA-444940-02) targeted at emerging applications for the 4.4 to 5.1 GHz frequency band, such as telemetry, dedicated high data rate wireless network, point to point wireless communications, and military wireless communications.

  • WPS-445133-02 has 2W output power at 1dB gain compression point and 26 dBm linear output power (burst power) at 2.5% EVM (Error-Vector-Magnitude) under the 64 QAM 802.11 digital signal modulation scheme. This multiple-stage power amplifier has 33 dB of gain.
  • WPS-444924-02 produces 4W output power at 1dB gain compression point and 29 dBm linear output power at 2% EVM with 10 dB gain.
  • As a GaN based high power amplifier that requires 28 Volts on the drain bias, the MGA-444940-02 achieves 10W output power at 2dB gain compression point and 33 dBm linear power at 2.5% EVM with 12 dB gain. The power added efficiency at 2W linear power level for this power amplifier is as high as 20%.

All three power amplifiers are fully matched for both input and output terminals for easy cascade and are packaged in the MwT -02 surface mount package with RoHS compliance, says the firm. The MTBF (mean-Time-Before-Failure) for these microwave/RF power amplifiers is over 100 years at 85 degrees centigrade ambient temperature. Evaluation boards for the power amplifiers in 02 packages are available now.

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