25 August 2011

EPC adds 2nd-generation 40V, 16 milliohm eGaN FET power transistor

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2014 as the newest member of its second-generation enhanced performance eGaN FET gallium nitride on silicon (eGaN) field-effect transistor family (which was launched in March with the EPC2001 and EPC2015, and added to in June with the EPC2010 and in mid-August with the EPC2012).

The EPC2014 FET is a 1.87mm2, 40VDS, 10A device with a maximum on-resistance RDS(ON) of 16 milliOhms with 5V applied to the gate. The firm says that the latest eGaN FET provides significant performance advantages over the first-generation EPC1014 device. It  has an increased maximum junction temperature rating of 150ºC and is fully enhanced at a lower gate voltage.

Compared with a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times better switching performance, says EPC. Applications that benefit from eGaN FET performance include high-speed DC–DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high-frequency circuits.

“This new-generation enhancement-mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant,” notes co-founder & CEO Alex Lidow.

In 100-piece quantities, the EPC2014 is priced at $1.12 and is available through Digi-Key Corp.

Tags: EPC GaN GaN FETs

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Visit: http://epc-co.com/epc/documents/product-training

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