29 August 2011

EPC introduces development board for systems using 40V EPC2014 eGaN FETs

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9005 development board, which the firm says will make it easier for users to start designing with its 40V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) in applications such as high-speed DC–DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high-frequency circuits.

The EPC9005 development board is a 40V maximum device voltage, 7A maximum output current, half bridge with on-board gate drives, featuring the EPC2014 40V eGaN FET (which was launched last week). The board's purpose is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

Measuring 2” x 1.5”, the EPC9005 development board contains not only two EPC2014 GaN FETs in a half-bridge configuration with gate drivers, but also an on-board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

EPC9005 development boards are priced at $95 each and are available from Digi-Key Corp. A ‘Quick Start Guide’ is included for reference and ease of use.

Tags: EPC GaN GaN FETs

Visit: http://epc-co.com/epc/documents/guides/EPC9005_qsg.pdf

Visit: www.digikey.com

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