25 August 2011

G-Way launches GaN-based multi-octave PAs

G-Way Microwave of South Hackensack, NJ, USA says that its new model MP2000/2G/50MK-A high power amplifier (HPA) uses gallium nitride (GaN) power devices that provide an output of 100W throughout the full 1–3GHz frequency band. The HPA offers a typical gain flatness of ±2.5dB with a typical gain of 15dB.

The module’s package size is 8.2” x 5.4” x 1.1”, with a nominal operating DC supply of 28V at 6A. Additional standard features include current and temperature monitoring, enable/disable function and over-temperature shutdown with auto recovery. Standby current is a maximum of 0.05A under disable status. All DC, monitoring functions and muting are accessible via a D7W2 connector. Typical applications include communication systems and broadband jamming.

G-Way is an ISO9001:2008 certified company incorporated in 1997 that designs and manufactures custom passive and active RF and microwave components for wireless signal enhancement systems designed for outdoor and indoor applications in commercial and dual-purpose environments. Passive components include bandpass, lowpass, highpass, and bandstop filters, along with filtering configurations including diplexers, duplexers, triplexers, and multiplexers. Active components include low-noise amplifiers (LNAs), and low-, medium- and high-power RF amplifiers. Also, system design and assembly is available for commercial, military, telecoms, test & measurement, and custom applications.

Tags: G-Way GaN GaN power devices

Visit: www.gwaymicrowave.com

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