4 August 2011

Kyma launches n+ bulk GaN substrate product line

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, has launched its n+ c-plane bulk GaN substrate product line.

The n+ GaN substrates will have a bulk resistivity specification of  <0.02Ω-cm, which is two orders of magnitude lower in resistivity than Kyma’s previously offered n-type GaN. The firm has also produced n+ bulk GaN wafers with measured carrier concentrations of up to 6x1018cm-3 and corresponding bulk resistivities of <0.005Ω-cm. 

Kyma’s n-type GaN product is still being offered and, for distinction, is being relabeled as n– GaN.  Kyma says that, while its n– GaN remains an excellent starting material for a variety of materials and device studies, its n+ GaN offers benefits for vertical devices as well as reduced contact resistance for all devices. 

Key advantages for vertical power devices include ultra-low on-resistance as well as decreased parasitic resistance. Key advantages for light-emitting diodes (LEDs) include low vertical resistance and the mitigation of current-crowding effects.

“We are pleased to respond to our customers’ requests for more conductive substrates,” says characterization and device engineer Dr Jacob Leach. “The high electron concentrations in this new product line directly support higher performance and reliability for a number of device applications of great commercial interest,” he adds.

“We are happy to offer these new substrates in form factors of 10mm x 10mm squares and 18mm x 18mm squares,” says technical sales engineer Tamara Stephenson. “Additionally, the development of commercially available 2” diameter and larger n+ bulk GaN substrates is underway.”

Tags: Kyma GaN AlN n+ bulk GaN substrates

Visit: www.kymatech.com