6 December 2011

EPC’s eGaN FET receives EDN China Innovation Leading Product Award

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power conversion applications, has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 recognizes product innovation by China’s electronics design engineers and managers.

“The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher-performance replacements for silicon-based MOSFETs,” notes the firm’s CEO Alex Lidow.

Launched in June, EPC2010 is EPC’s second-generation 200V eGaN power transistor with high-frequency-switching, enhanced performance in a lead-free, RoHS package.

The EPC2010 is a 200VDS device with a maximum RDS(ON) of 25 milliohms with 5V applied to the gate. It has an increased pulsed current rating of 60A (compared with 40A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance, it is claimed. Applications that can benefit from eGaN FET performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and hard-switched and high-frequency circuits.

Tags: EPC GaN GaN FETs

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