17 February 2011

China’s ISCAS to receive Aixtron MOCVD reactors for electronics and red LEDs

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in third-quarter 2010 it received an order for two metal-organic chemical vapor deposition (MOCVD) reactors (one AIX 200/4 in 3x2-inch wafer configuration and one AIX 2600G3 IC in 8x3-inch wafer configuration) from existing customer the Institute of Semiconductors of the Chinese Academy of Sciences (ISCAS) in Beijing.

Following delivery in second-quarter 2011, the systems will be used for the production of electronic devices and red LEDs. The local Aixtron support team will commission the new reactors in a dedicated facility.

“This is a repeat order for us and, over half a decade, we have formed a good long-term relationship with the Aixtron group,” says a spokesperson for ISCAS. “We have been impressed in initial trials how effectively and easy it has been to scale up device processes from our existing deposition systems to the new Aixtron systems,” they add.

“Our relationship with Aixtron began way back in 2003 when ISCAS expanded its R&D capabilities, installing a state-of-the-art Close Coupled Showerhead¨ (CCS) MOCVD reactor,” the spokesperson continues. “That 3x2-inch reactor enabled us to grow high-quality gallium nitride (GaN) on sapphire layers on 4-inch wafers as well as GaN on silicon, primarily for the development of short-wavelength laser diodes and UV photo-detector based devices.”

See: Aixtron Company Profile

Tags: Aixtron MOCVD GaN LEDs ISCAS

Visit: www.aixtron.com

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