25 February 2011

Cree launches first surface-mount 1200V SiC Schottky

Cree Inc of Durham, NC, USA has made available what it says is the industry’s first commercial 1200V surface-mount silicon carbide (SiC) Schottky diode (fully qualified and released for production use).

Packaged in an industry-standard surface-mount TO-252 D-Pak, Cree says that the Schottky diodes deliver the same proven performance as its TO-220 through-hole devices, but with a smaller board footprint and lower profile. This can enable the design of smaller, lower-cost and more efficient solar-power micro-inverters, compared to systems designed with larger and bulkier through-hole parts, the firm claims.

“Customers designing high-efficiency micro-inverters for solar power applications wanted to simplify their designs without compromising system efficiency,” explains Cengiz Balkas, Cree’s VP & general manager, Power and RF. “They were looking for a surface-mount device that could deliver the same performance they had come to expect from SiC Schottky diodes — zero reverse-recovery losses, high-frequency operation with a low EMI signature, and reduced operating temperatures,” he adds. “Given Cree’s experience in developing high-voltage SiC power devices, the move to the surface-mount D-Pak was a natural extension of our Schottky diode product line to serve this critical market.”

“Design trends in solar-power micro-inverters are requiring the use of surface-mount components with smaller footprints and lower profiles,” says Alessandro Di Nicco, design engineer new platforms at Power-One. “This enables us to both reduce the size of the inverter circuitry and lower the cost, while maintaining reliability and high efficiency, with the eventual goal of physically integrating the micro-inverter into the solar panels themselves,” he adds. “Cree’s new surface-mount Schottky diodes represent a significant step in that development.”

Cree’s C2D05120E Schottky diodes are rated for 5A and 1200V, with approximate board-mounted dimensions of 6.6mm wide x 9.9mm long x 2.3mm high. The operating junction and storage temperatures are rated for –55°C to +175°C.

See related items:

Cree’s 650V SiC Schottkys boost data-center power supply efficiency

Cree launches Z-Rec 1700-V JBS diode series

Tags: Cree SiC Schottky diode SiC

Visit: www.cree.com/power

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