1 June 2011

EPC launches 2nd-generation 200V eGaN power transistor

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2010 as the newest member of its second-generation enhancement-mode gallium nitride on silicon (eGaN) field-effect transistor (FET) family (which was launched in March with the EPC2001 and EPC2015 eGaN FETs).

The EPC2010 FET is a 200VDS device with a maximum on-resistance RDS(ON) of 25 milli-Ohms with 5V applied to the gate. The firm says that the latest EPC2010 provides significant performance advantages over the first-generation EPC1010 eGaN FET. It has an increased pulsed current rating of 60A (up from 40A), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared with a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance, says EPC. Applications that benefit from eGaN FET performance include high-speed DC–DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high-frequency circuits.

“EPC was the first company to make gallium nitride power FETs commercially available,” claims co-founder & CEO Alex Lidow. “With our second-generation of products, we are now raising the bar for the performance of gallium nitride FETs,” he adds. “In addition, our new generation of eGaN products are the first gallium nitride FETs to be offered as lead-free and RoHS[Restriction of Hazardous Substances]-compliant.”

In 1000-piece quantities, the EPC2010 is priced at $5.06 and is available through distributor Digi-Key Corp.

EPC has also made available the EPC9003 development board (priced at $95 each) to demonstrate the performance of the EPC2010 and to expedite design-in efforts, making it easier for users to start designing with the 200V eGaN FET in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

An application note detailing the performance improvements of the EPC2010 eGaN can be found at http://epc-co.com

Tags: EPC GaN GaN FETs

Visit: http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf

Visit: http://digikey.com

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