14 June 2011

Integra launches high-voltage GaN-on-SiC devices for S-band radar

At last week’s IEEE MTT-S International Microwave Symposium (IMS 2011) in Baltimore, MD (5–10 June), Integra Technologies Inc (ITI) of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, announced the development of high-voltage gallium nitride on silicon carbide (GaN-on-SiC) technology by launching two wide-band products (the IGN2735M30 and IGN2735M250) and two narrow-band products (the IGN2729M400 and the IGN2325CW110).

“GaN technology’s inherent low capacitances enable broadband designs that cover both commercial and military air-traffic control (ATC) radar bands simultaneously,” says founder & president John Titizian. “We have years of RF expertise manufacturing high-power semiconductors, and with our low overhead cost structure we will continue to dominate in both price and performance,” he reckons. 

The IGN2735M30 and IGN2735M250 operate over the instantaneous bandwidth covering 2.7–3.5GHz in the S-band frequency range. Under 300µs pulse width and 10% duty-cycle pulsing conditions, the minimum peak output power is typically 35W for the IGN2735M30 and 250W for the IGN2735M250. With breakdown voltages approaching 80V, characterized at an operating voltage of 32V the IGN2735M30 provides more than 12dB of gain and 55% efficiency and the IGN2735M250 provides more than 11dB of gain and 55% efficiency. 

Intended for commercial S-band ATC radars, the IGN2729M400 operates over the instantaneous bandwidth covering 2.7–2.9GHz in the S-band frequency range. Under 300µs pulse width and 10% duty-cycle pulsing conditions, it typically supplies a minimum of 400W of peak output power, while providing more than 12dB of gain and 55% efficiency.

The IGN2325CW110 operates over the instantaneous bandwidth covering 2.3–2.5GHz in the S-band frequency range. Operating under continuous-wave (CW) conditions, the device supplies more than 125W of output power while providing 12dB of gain and 60% efficiency.

The single-ended devices are housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices, it is claimed.

The IGN2735M30 and IGN2735M250 are available now for sampling. The IGN2729M400 and IGN2325CW110 will be available for sampling in third-quarter 2011.

Tags: Integra S-band radar

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